Revealing multiphase coexistence of R-O-T phases in BaTiO3-CaTiO3-BaSnO3 electroceramics for energy harvesting and storage response with piezo actuation

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2024-09-30 DOI:10.1016/j.sna.2024.115932

Nikita J. Kapadi , Tejas K. Jadhav , Tulshidas C. Darvade , Ajit R. James , V.R. Reddy , Y.D. Kolekar , Rahul C. Kambale

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引用次数: 0

Abstract

The (Ba_1-xCa_x)(Sn_yTi_1-y)O₃ piezoelectric ceramics (where x=0.016, y=0.024; x=0.032, y=0.048; x=0.048, y=0.072; x=0.064, y=0.096; x=0.08, y=0.12) were designed by conventional solid state reaction method. The crystal structure for the composition of x=0.064 and y=0.096 (abbreviated as BCST-4) possesses the coexistence of non-centrosymmetric rhombohedral-orthorhombic-tetragonal (R-O-T) tri-lattice symmetries at room temperature, as demonstrated by the structural Rietveld refinement, Raman analysis, and temperature dependence of dielectric study. Because of the R-O-T multiphase coexistence, BCST-4 possesses a superior electromechanical and piezoelectric property viz. k_p ∼ 0.45, strain ∼ 0.100 %, d₃₃* ∼ 649 pm/V, and an improved d₃₃ ∼ 452 pC/N, which is comparable to commercially available soft PZT ceramics (d₃₃ ⁓ 370 pC/N). For BCST-4 ceramics, an exceptional electrostriction coefficient Q₃₃ ∼ 0.0434 m⁴/C² value was attained. The intrinsic piezo-actuation DC strain was observed to be 130 microstrain (με) and 188 με with ε₃₃ and ε₃₁ modes respectively. The BCST-4 ceramic exhibits a maximum output power of 1.03 mW, a power density of 13.5 µW/mm³, a maximum output current of 88 µA, and an open circuit voltage V_pp of 28 V which successfully glowed ‘SPPU’ panel having 40 red commercial light-emitting diodes (LEDs). The energy storage study reveals that BCST-4 ceramics exhibit a maximum energy storage density (W_rec) of 165.87 mJ/cm³ with efficiency (ƞ) 68.00 %. Therefore, the improvement in electrostriction coefficient, piezoelectric charge coefficient, and energy storage response indicates that BCST-4 ceramic has the potential for actuator, energy harvesting, and energy storage applications.

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揭示 BaTiO3-CaTiO3-BaSnO3 电陶瓷中 R-O-T 相的多相共存，利用压电致动实现能量收集和存储响应

采用传统固态反应方法设计了 (Ba1-xCax)(SnyTi1-y)O3 压电陶瓷（其中 x=0.016, y=0.024; x=0.032, y=0.048; x=0.048, y=0.072; x=0.064, y=0.096; x=0.08, y=0.12）。结构里特维尔德细化、拉曼分析和介电研究的温度依赖性证明，x=0.064 和 y=0.096 组成的晶体结构（简称 BCST-4）在室温下具有非中心对称的斜方晶格-正方晶格-四方晶格（R-O-T）三晶格对称性共存。由于 R-O-T 多相共存，BCST-4 具有优异的机电和压电特性，即 kp ∼ 0.45，应变 ∼ 0.100 %，d33* ∼ 649 pm/V，d33 ∼ 452 pC/N，与市售的软质 PZT 陶瓷（d33 ⁓ 370 pC/N）相当。BCST-4 陶瓷的电致伸缩系数 Q33 ∼ 0.0434 m4/C2 值非常高。观察到的本征压动直流应变分别为 130 微应变（με）和 188 微应变（ε33 和 ε31）。BCST-4 陶瓷的最大输出功率为 1.03 mW，功率密度为 13.5 µW/mm3，最大输出电流为 88 µA，开路电压 Vpp 为 28 V，成功地使装有 40 个红色商用发光二极管 (LED) 的 "SPPU "面板发光。储能研究表明，BCST-4 陶瓷的最大储能密度（Wrec）为 165.87 mJ/cm3，效率（ƞ）为 68.00%。因此，电致伸缩系数、压电电荷系数和储能响应的改善表明，BCST-4 陶瓷具有执行器、能量收集和储能应用的潜力。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...