Influence of Si flow rate on the performance of MOCVD-deposited Si-doped Ga2O3 films and the applications in ultraviolet photodetectors

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-06 DOI:10.1016/j.jcrysgro.2024.127914

Wenkai Wu , Yao Wang , Qian Cheng , Jiale Li , Wenji Li , Qian Feng , Yachao Zhang , Jincheng Zhang , Yue Hao

{"title":"Influence of Si flow rate on the performance of MOCVD-deposited Si-doped Ga2O3 films and the applications in ultraviolet photodetectors","authors":"Wenkai Wu , Yao Wang , Qian Cheng , Jiale Li , Wenji Li , Qian Feng , Yachao Zhang , Jincheng Zhang , Yue Hao","doi":"10.1016/j.jcrysgro.2024.127914","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, the Metal-organic Chemical Vapor Deposition (MOCVD) technology was used to successfully grow Si-doped β-Ga<sub>2</sub>O<sub>3</sub> films on C-plane sapphire substrates. The effects of Si flow rate on the surface morphology, crystal composition, electrical and optical properties of the films were characterized and analyzed. The experimental results show that the full width at half maximum (FWHM) and root mean square (RMS) of the films are improved with the decrease of Si flow rate. More importantly, only the sample with the lowest Si flow rate showed conductive ability, and its carrier concentration and mobility were 4.20 cm<sup>2</sup>/V·s and 3.33 × 10<sup>16</sup> cm<sup>−3</sup>, respectively. In addition, we also made photodetectors corresponding to the thin films. The test results showed that the external quantum efficiency (EQE) and responsiveness (R) of the detectors improved with the decrease of Si flow rate.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127914"},"PeriodicalIF":1.7000,"publicationDate":"2024-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S002202482400352X","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}

引用次数: 0

Abstract

In this work, the Metal-organic Chemical Vapor Deposition (MOCVD) technology was used to successfully grow Si-doped β-Ga₂O₃ films on C-plane sapphire substrates. The effects of Si flow rate on the surface morphology, crystal composition, electrical and optical properties of the films were characterized and analyzed. The experimental results show that the full width at half maximum (FWHM) and root mean square (RMS) of the films are improved with the decrease of Si flow rate. More importantly, only the sample with the lowest Si flow rate showed conductive ability, and its carrier concentration and mobility were 4.20 cm²/V·s and 3.33 × 10¹⁶ cm⁻³, respectively. In addition, we also made photodetectors corresponding to the thin films. The test results showed that the external quantum efficiency (EQE) and responsiveness (R) of the detectors improved with the decrease of Si flow rate.

查看原文本刊更多论文

硅流速对 MOCVD 沉积的掺硅 Ga2O3 薄膜性能的影响及其在紫外光检测器中的应用

本研究采用金属有机化学气相沉积（MOCVD）技术在 C 平面蓝宝石衬底上成功生长了掺杂硅的β-Ga2O3 薄膜。研究分析了硅流量对薄膜表面形貌、晶体组成、电学和光学性能的影响。实验结果表明，薄膜的半最大全宽（FWHM）和均方根（RMS）随硅流率的降低而提高。更重要的是，只有硅流速最低的样品才具有导电能力，其载流子浓度和迁移率分别为 4.20 cm2/V-s 和 3.33 × 1016 cm-3。此外，我们还制作了与薄膜相对应的光电探测器。测试结果表明，探测器的外部量子效率（EQE）和响应度（R）随硅流率的降低而提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.