Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-09 DOI:10.1016/j.jcrysgro.2024.127923

Kazuki Ohnishi , Kansuke Hamasaki , Shugo Nitta , Naoki Fujimoto , Hirotaka Watanabe , Yoshio Honda , Hiroshi Amano

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引用次数: 0

Abstract

Results of a thermodynamic study of Sn doping and fabrication of a Sn-doped GaN freestanding layer with high structural quality by halide vapor phase epitaxy (HVPE) are described in this paper. Thermodynamic analysis revealed that SnCl₂ and/or SnCl act as Sn precursors through the reaction between Sn metal and HCl gas. The equilibrium partial pressures of SnCl₂ and SnCl increase with the input HCl partial pressure. To generate Sn precursors effectively, it is desirable that the reaction between Sn metal and HCl gas occurs in the inert gas ambient. On the basis of results of the thermodynamic study, the Sn-doped GaN freestanding layer with a Sn concentration of 5.7 × 10¹⁹ cm⁻³ is fabricated by removing the GaN seed substrate after HVPE growth. The Sn-doped GaN freestanding layer has high crystal quality, and the lattice constants along the c- and a-axes of the Sn-doped GaN freestanding layer are larger than those of the GaN seed substrate because of the high electron density and the size effect of Sn atoms.

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掺锡 n 型氮化镓独立层：热力学研究和卤化物气相外延法制造

本文介绍了锡掺杂的热力学研究结果，以及通过卤化物气相外延（HVPE）制造出具有高结构质量的锡掺杂氮化镓独立层。热力学分析表明，SnCl2 和/或 SnCl 通过金属锡和 HCl 气体之间的反应充当了锡前驱体。SnCl2 和 SnCl 的平衡分压随输入 HCl 分压的增加而增加。为了有效地生成锡前驱体，金属锡和 HCl 气体之间的反应最好在惰性气体环境中进行。根据热力学研究的结果，在 HVPE 生长后移除 GaN 种子衬底，制备出 Sn 浓度为 5.7 × 1019 cm-3 的掺锡 GaN 独立层。掺Sn的独立GaN层具有很高的晶体质量，由于高电子密度和Sn原子的尺寸效应，掺Sn的独立GaN层沿c轴和a轴的晶格常数大于GaN种子衬底的晶格常数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.