Growth of single crystals of crowningshieldite (α-NiS) by chemical-vapour transport

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
Thomas E. Gore
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引用次数: 0

Abstract

Single crystals of crowningshieldite (α-NiS) were synthesized in three runs via chemical-vapour transport (CVT) over a 20 cm horizontal gradient of 700 → 600 °C (No. 1) and 800 → 700 °C (No. 2 & 3) in evacuated fused silica capsules using natural millerite from Coleman mine in Sudbury, Ontario, Canada with the composition (Ni0.976Fe0.013Co0.003)Σ0.992S and I2 as a transport reagent. Products were characterized via PXRD and SEM methods. Resultant crystals are euhedral, 10 to 400 μm in diameter, and occur as three distinct populations: 1) platy crystals exhibiting dominant pinacoid {0001} and minor dipyramid {101¯1}; 2) equant crystals with equal development of both the pinacoid {0001} and dipyramid {101¯1}; and 3) blocky crystals showing only the dipyramid {101¯1}. The largest crystals were produced at higher temperatures, but experiments lasting longer than 12 days did not result in significant additional crystal growth. In addition to euhedral crystals, anhedral droplets were observed to form during run No. 2 & 3 suggesting deposition as a liquid as opposed to solid crystals. Synthesis of crystals from a pure NiS compound as opposed to that of natural composition may improve the quality of the resulting crystals and better constrain the ideal growth temperature.
通过化学气相传输生长冠盔石(α-NiS)单晶体
在加拿大安大略省萨德伯里科尔曼矿的天然千枚岩中,通过化学气相传输(CVT)在 700 → 600 °C(1 号)和 800 → 700 °C(2 号和 3 号)的 20 厘米水平梯度上分三次合成了冠状盾石(α-NiS)单晶。2 & 3)在抽真空熔融石英胶囊中,使用加拿大安大略省萨德伯里科尔曼矿的天然千枚岩,成分为(Ni0.976Fe0.013Co0.003)Σ0.992S,并使用 I2 作为传输试剂。产品通过 PXRD 和 SEM 方法进行表征。生成的晶体为八面体,直径在 10 到 400 μm 之间,有三种不同的晶体群:1) 呈板状的晶体,主要呈针状{0001},次要呈二棱锥状{101¯1};2) 等长晶体,针状{0001}和二棱锥状{101¯1}发育相当;3) 块状晶体,仅呈二棱锥状{101¯1}。最大的晶体是在较高的温度下产生的,但超过 12 天的实验并没有导致晶体的显著增长。除了八面体晶体外,在 2 & 3 号运行过程中还观察到正方体液滴的形成,这表明沉积为液体而非固体晶体。用纯 NiS 化合物而不是天然成分合成晶体可能会提高晶体的质量,并更好地限制理想的生长温度。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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