Electronic, electrical and magnetic behavioural changes of layer by layer deposited Cd0.4Zn0.6S and r-GO composites thin film (Cd0.4Zn0.6S:r-GO) semiconductors
IF 1.9 4区 材料科学Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
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引用次数: 0
Abstract
Cd0.4Zn0.6S:r-GO composite thin film semiconductor is prepared by the process of layer by layer deposition of cadmium zinc sulphide (Cd0.4Zn0.6S) and reduced graphene oxide (r-GO) on Si-substrate by DIP-coating technique. In this process, initially, aqueous solution of Cd0.4Zn0.6S is deposited on Si-substrate (Cd0.4Zn0.6S/Si) and baked at 500°C temperature, then, aqueous solution of r-GO is deposited on (Cd0.4Zn0.6S/Si) and baked at the same temperature to fabricate (r-GO/Cd0.4Zn0.6S/Si) composite thin film semiconductors. Structural/electronic/electrical/magnetic properties of (Cd0.4Zn0.6S:r-GO)/Si composite thin film semiconductor is enhanced in the vicinity of interfacial defects, impurities, density of states with exchange of metallic/non-metallic ions (Cd2+/Zn2+)/(S2−, SO32−) along with the incorporation of different O-functional radicals that immigrate from r-GO. It is expected that the Cd0.4Zn0.6S:r-GO composite thin film semiconductor is capable of providing future promising optoelectronic as well as magnetic device-based applications.
期刊介绍:
The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.