Electronic Properties of Highly Compensated Semiconductors: The HR-GaAs:Cr Material

Abstract

It is found out that the HR-GaAs:Cr material is formed when the conductivity of n-GaAs is compensated by N_Cr chromium atoms, resulting in highly localized acceptor states at the mid of the bandgap. Such a structure is characterized by both the extremely high resistivity (ρ_max), exceeding the resistance (ρ_i) of its own semiconductor (ρ_max ≥ ρ_i), and the prolonged lifetime (τ_n) of non-equilibrium electrons, determining its high photosensitivity. Thus, it can be implemented in various basic electronic components for functional devices.