Annealing temperature induced variation on the electrical and photoelectrical characteristics of Al/Feq3/p-Si/Al heterojunction diode

IF 2.5 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Applied Physics A Pub Date : 2024-10-11 DOI:10.1007/s00339-024-07910-z

I. T. Zedan, L. M. El-Khalawany, E. M. El-Menyawy

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Abstract

Iron tris(8-hydroxyquinoline) (Feq₃) is thermally stable up to 310 °C. Feq₃ thin films are used to fabricate Al/Feq₃/p-Si/Al heterojunction diode. Based on the thermal properties, the device is annealed at 210 and 280 °C. In order to understand the diode behavior, as-deposited and annealed films are characterized by X-ray diffraction, transmission electron microscope and spectrophotometric measurements of transmittance. Annealing is found to influence the optical band gap of the films. The current–voltage (I–V) characteristics were measured for as-fabricated and annealed temperatures in dark and under illumination. The dark electrical parameters of diode are investigated, from which the ideality factor (n), potential barrier height (ϕ) and series resistance (R_s) of the as-fabricated and annealed Al/Feq₃/p-Si/Al heterojunction are determined. These diode parameters are estimated and discussed in terms of both conventional I–V characteristics and Cheung–Cheung functions. The diode under illumination is found to be influenced by annealing and is found to have photoconduction characteristics in which the photoresponsivity (at − 1 V) of as-fabricated and annealed diode at 280 °C are estimated as 2.77 × 10^–4 and 2.55 × 10^–3 A/W, respectively.

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退火温度对 Al/Feq3/p-Si/Al 异质结二极管电气和光电特性的影响

三（8-羟基喹啉）铁（Feq3）的热稳定性高达 310 ℃。Feq3 薄膜用于制造 Al/Feq3/p-Si/Al 异质结二极管。根据热特性，该器件在 210 ℃ 和 280 ℃ 下退火。为了了解二极管的行为，通过 X 射线衍射、透射电子显微镜和分光光度法测量透射率，对沉积和退火薄膜进行了表征。研究发现，退火会影响薄膜的光带隙。在黑暗和照明条件下，测量了原样和退火温度下的电流-电压（I-V）特性。研究了二极管的暗电参数，从中确定了原样制造和退火的 Al/Feq3/p-Si/Al 异质结的意向系数 (n)、势垒高度 (j)和串联电阻 (Rs)。根据传统的 I-V 特性和 Cheung-Cheung 函数对这些二极管参数进行了估算和讨论。研究发现，光照下的二极管会受到退火的影响，并具有光电导特性，在 280 °C 时，原样制造和退火的二极管的光致发射率（- 1 V 时）分别估计为 2.77 × 10-4 和 2.55 × 10-3 A/W。

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来源期刊

Applied Physics A 工程技术-材料科学：综合

CiteScore

4.80

自引率

7.40%

发文量

964

审稿时长

38 days

期刊介绍： Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.