A 2.08-mW 64.4-dB SNDR 400-MS/s Pipelined- SAR ADC Using Mismatch and PVT Variation Tolerant Dynamically Biased Ring Amplifier in 8 nm

IF 4.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Yong Lim;Jaehoon Lee;Jongmi Lee;Kwangmin Lim;Seunghyun Oh;Jongwoo Lee
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引用次数: 0

Abstract

In this article, we introduce a new dynamically biased ring amplifier that is tolerant to mismatch and PVT variation without requiring bias calibration, and we verify it in a 12-bit 400-MS/s pipelined-SAR analog-to-digital converter (ADC), fabricated in an 8-nm FinFET process. Our novel ring amplifier solves the biasing issues inherent in conventional ring amplifiers while maintaining the benefits of high gain, slew-based charging, and nearly rail-to-rail output swing. We also propose a technique to enhance the DC accuracy of a switched-capacitor common-mode feedback (CMFB) without consuming additional power, which we named feedback voltage sampling CMFB. Furthermore, we introduce a full-scale matching residue amplification technique for the prototype pipelined-SAR ADC to utilize the top-plate input sampling for the first-stage SAR ADC, resulting in faster and lower power conversion. The prototype ADC demonstrates the robustness of our dynamically biased ring amplifier to mismatch and PVT variation without any interstage gain, bias, or reference calibration, and achieves 64.4-dB SNDR and 77.6-dB SFDR for a low-frequency input while consuming 2.08 mW. This measured performance is equivalent to Walden and Schreier FoMs of 3.8 fJ/conversion $\cdot $ step and 174.2 dB, respectively.
使用 8 纳米耐失配和 PVT 变化动态偏置环形放大器的 2.08 mW 64.4-dB SNDR 400-MS/s 流水线 SAR ADC
在这篇文章中,我们介绍了一种新型动态偏置环形放大器,它能够承受失配和 PVT 变化,无需进行偏置校准,我们还在 8 纳米 FinFET 工艺制造的 12 位 400-MS/s pipelined-SAR 模数转换器 (ADC) 中对其进行了验证。我们的新型环形放大器解决了传统环形放大器固有的偏置问题,同时保持了高增益、基于压摆的充电和接近轨至轨输出摆幅的优点。我们还提出了一种在不消耗额外功率的情况下提高开关电容共模反馈(CMFB)直流精度的技术,并将其命名为反馈电压采样 CMFB。此外,我们还为原型流水线 SAR ADC 引入了全量程匹配残差放大技术,以利用第一级 SAR ADC 的顶板输入采样,从而实现更快、更低功耗的转换。原型 ADC 演示了我们的动态偏置环形放大器对失配和 PVT 变化的稳健性,无需任何级间增益、偏置或基准校准,并在低频输入时实现了 64.4 分贝 SNDR 和 77.6 分贝 SFDR,而功耗仅为 2.08 mW。这一实测性能相当于 Walden 和 Schreier FoM,分别为 3.8 fJ/conversion $\cdot $ step 和 174.2 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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