{"title":"A 33.5–92.6-GHz CMOS Injection-Locked Frequency Divider Using Fourth-Order Resonator","authors":"Guoqing Dong;Yizhu Shen;Sanming Hu","doi":"10.1109/LMWT.2024.3444001","DOIUrl":null,"url":null,"abstract":"This letter presents a novel fourth-order resonator for millimeter-wave (mmW) wideband injection-locked frequency divider (ILFD) in 40-nm CMOS. To operate at high frequencies, such as E-band, and obtain wide locking range (LR) simultaneously, the fourth-order transformer is intentionally designed with high coupling coefficient and low quality factor of secondary coil to achieve a flat and broad impedance response. The measurement results demonstrate an LR of 59.1 GHz from 33.5 to 92.6 GHz, with a fractional bandwidth of 93.7%. The chip features a compact core area of 0.0165 mm2 (\n<inline-formula> <tex-math>$0.0007\\lambda ^{2}$ </tex-math></inline-formula>\n) and consumes 6.18 mW from a 0.6-V voltage supply.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 10","pages":"1190-1193"},"PeriodicalIF":0.0000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10663747/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This letter presents a novel fourth-order resonator for millimeter-wave (mmW) wideband injection-locked frequency divider (ILFD) in 40-nm CMOS. To operate at high frequencies, such as E-band, and obtain wide locking range (LR) simultaneously, the fourth-order transformer is intentionally designed with high coupling coefficient and low quality factor of secondary coil to achieve a flat and broad impedance response. The measurement results demonstrate an LR of 59.1 GHz from 33.5 to 92.6 GHz, with a fractional bandwidth of 93.7%. The chip features a compact core area of 0.0165 mm2 (
$0.0007\lambda ^{2}$
) and consumes 6.18 mW from a 0.6-V voltage supply.