A 24-to-28-GHz Asymmetric GaN MMIC Doherty Power Amplifier With 32% PAE at 8-dB Back-Off Using Optimal Phase Dispersion Inverter

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IEEE microwave and wireless technology letters Pub Date : 2024-09-03 DOI:10.1109/LMWT.2024.3450752

Ruijia Liu;Xiao-Wei Zhu;Jing Xia;Peng Chen;Lei Zhang;Chao Yu;Wei Hong;Anding Zhu

引用次数: 0

Abstract

In this letter, a high-performance millimeter-wave (mm-wave) asymmetric gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) for 5G-new-radio (NR) n258 band application is presented. To ensure that each transistor can achieve a proper active load impedance across a wide bandwidth during load modulation, a method for designing the impedance inverter with the optimal phase dispersion characteristic is proposed. For verification, a 24-to-28-GHz asymmetric GaN MMIC DPA was designed using a 150-nm GaN-HEMT process. The fabricated DPA achieved a saturated power range of 36.8–38.1 dBm, with a saturated power-added efficiency (PAE) of 29.7%–36.8%. The PAEs at 8- and 9-dB power back-offs (PBOs) ranged from 18.6% to 32% and 18.8% to 29.7%, respectively. After applying digital predistortion, the DPA achieved a high average PAE of 29% with good linearity when excited by a 400-MHz modulated signal.

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使用最佳相位色散反相器的 24-28-GHz 非对称 GaN MMIC Doherty 功率放大器，在 8 分贝衰减时具有 32% 的 PAE

本文介绍了一种用于 5G 新无线电（NR）n258 波段应用的高性能毫米波（mm-wave）非对称氮化镓（GaN）单片微波集成电路（MMIC）多尔蒂功率放大器（DPA）。为确保每个晶体管在负载调制期间都能在宽带宽上实现适当的有源负载阻抗，提出了一种具有最佳相位色散特性的阻抗反相器设计方法。为了进行验证，我们采用 150 纳米 GaN-HEMT 工艺设计了一个 24 至 28 GHz 的非对称 GaN MMIC DPA。制造出的 DPA 达到了 36.8-38.1 dBm 的饱和功率范围，饱和功率附加效率（PAE）为 29.7%-36.8%。8 分贝和 9 分贝功率衰减 (PBO) 时的 PAE 分别为 18.6% 至 32% 和 18.8% 至 29.7%。应用数字预失真后，DPA 的平均 PAE 高达 29%，在 400MHz 调制信号激励下线性度良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

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