Ultra-high PDCR(>10⁹) of vacuum-UV photodetector based on Al-doped Ga₂O₃microbelts.

IF 2.9 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nanotechnology Pub Date : 2024-10-21 DOI:10.1088/1361-6528/ad84ff

Zhi-Pin Hu, Hai-Feng Chen, Zi-Jie Ding, Qin Lu, Li-Jun Li, Xiang-Tai Liu, Shao-Qing Wang, Zhan Wang, Yi-Fan Jia

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引用次数: 0

Abstract

Al-doped Ga₂O₃microbelts with widths ranging from 20 to 154μm and lengths up to 2 mm were grown using carbothermal reduction. Based on these ultra-wide microbelts, single-microbelt (37μm wide) and double-microbelts(38μm/42μm wide) metal-semiconductor-metal photoconductive ultraviolet (UV) detectors PDs were fabricated and their optoelectronic performances were investigated at Vacuum-UV (VUV) wavelengths of 185 nm. Under irradiation of 185 nm, the Al-doped Ga₂O₃PD has a very-high photocurrent (I_ph) of 192.07μA and extremely low dark current (I_d) of 156 fA at 10 V, and presents a ultra-high light-to-dark current ratio of 1.23 × 10⁹. The responsivity (R), external quantum efficiency (EQE), and detectivity (D*) of the double-microbelts detector device were 1920 A W^-1, 9.36 × 10⁵%, and 8.6 × 10¹⁶Jones, respectively. Since the bandgap of the Al-doped microbelts becomes wider, and the fabricated detector has weaker sensitivity to radiation in the 254/365 nm wavelengths. Compared with the 254 nm and 365 nm UV cases, the devices under 185 nm VUV show the excellent high selectivity ratios of 1.47 × 10⁶and 1.7× 10⁷, respectively. This paper should provide a new insight on the VUV photodetectors utilizing Ga₂O₃microbelts.

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基于铝掺杂 Ga2O3 微带的超高 PDCR（>109）真空紫外线光电探测器。

利用碳热还原法生长了宽度为 20 至 154 μm、长度达 2 mm 的掺铝 Ga2O3 微带。在这些超宽微带的基础上，制备了单微带（37 微米宽）和双微带（38 微米/42 微米宽）金属-半导体-金属（MSM）光电导紫外线（UV）探测器 PD，并研究了它们在 185 纳米真空紫外线（VUV）波长下的光电性能。在 185 纳米波长的照射下，掺铝 Ga2O3 PD 在 10 V 电压下具有 192.07 μA 的超高光电流（Iph）和 156 fA 的极低暗电流（Id），并呈现出 1.23× 10^9 的超高光暗电流比（PDCR）。双微带探测器装置的响应率（R）、外部量子效率（EQE）和探测率（D*）分别为 1920 A/W 、9.36× 10^5 % 和 8.6× 10^16 Jones。由于掺铝微带的带隙变宽，因此制造出的探测器对 254/365 nm 波长的辐射灵敏度较弱。与 254 纳米和 365 纳米紫外线相比，185 纳米紫外线下的器件分别显示出 1.47× 10^6 和 1.7× 10^7 的优异高选择性比。本文将为利用 Ga2O3 微带的紫外光光电探测器提供新的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanotechnology 工程技术-材料科学：综合

CiteScore

7.10

自引率

5.70%

发文量

820

审稿时长

2.5 months

期刊介绍： The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.