Vertical multilayer structure of MoS2 flakes prepared by thermal evaporative deposition

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering B-advanced Functional Solid-state Materials Pub Date : 2024-10-01 DOI:10.1016/j.mseb.2024.117738

Siqi Zhao , Yunkai Li , Moyu Wei , Jingyi Jiao , Guoguo Yan , Xingfang Liu

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引用次数: 0

Abstract

In this investigation, we explore the synthesis of MoS₂ through thermal evaporative deposition, seeking to uncover the growth dynamics and structural evolution of MoS₂ under varied experimental conditions. By adjusting the temperature and the carrier gas, this study targets the fabrication of vertical multilayer MoS₂ and its growth mode. Our analysis demonstrates that thermal conditions markedly influence flake morphology and dimensions, leading to a notable shift from AA to AB stacking configurations as temperatures rise in the vacuum. Additionally, the application of carrier distinctly modifies growth behaviors, enhancing the uniformity of nucleation sites and the propensity for lateral flake expansion. The insights gained from this research highlight the adaptability and effectiveness of thermal evaporative deposition in producing MoS₂, thereby enriching our understanding of the fundamental mechanisms guiding MoS₂ synthesis.

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热蒸发沉积制备的 MoS2 薄片的垂直多层结构

在这项研究中，我们探讨了通过热蒸发沉积合成 MoS2 的方法，试图揭示不同实验条件下 MoS2 的生长动力学和结构演变。通过调整温度和载气，本研究以垂直多层 MoS2 的制造及其生长模式为目标。我们的分析表明，热条件对薄片形态和尺寸有明显影响，随着真空中温度的升高，AA 堆叠构型会明显转变为 AB 堆叠构型。此外，载流子的应用明显改变了生长行为，提高了成核点的均匀性和片状晶体的横向扩展倾向。从这项研究中获得的启示凸显了热蒸发沉积法在生产 MoS2 方面的适应性和有效性，从而丰富了我们对指导 MoS2 合成的基本机制的理解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science and Engineering B-advanced Functional Solid-state Materials 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.