Growth, optical and thermal properties of YbxSm1-xCa4O(BO3)3 crystals

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-09-23 DOI:10.1016/j.jcrysgro.2024.127902

Chen Yang, Linwen Jiang, Yanqing Zheng, Tuanjie Liang, Zhongjun Tian, Zhigang Sun

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引用次数: 0

Abstract

Yb_xSm_1-xCOB (x = 0.1, 0.2) crystals were grown by the Bridgman method for the first time. The purpose of this paper is to evaluate the application prospect of Yb:SmCOB crystal in quasi-parametric chirped pulse amplification (QPCPA) and frequency-doubling laser. The phase structure, thermal properties and optical properties of Yb:SmCOB were studied, and the density of states of SmCOB crystal was calculated by first-principles. The effective segregation coefficient K_eff of Yb_0.1Sm_0.9COB and Yb_0.2Sm_0.8COB crystals are 0.89 and 0.88, respectively. The thermal diffusivity and thermal conductivity of Yb:SmCOB decrease with increasing temperature. The specific heat increases with the increase of temperature and eventually tends to be constant. The specific heat of Yb:SmCOB crystal is greater than 0.70 J/(g·K) at room temperature. The transmittance of Yb:SmCOB crystal reaches 87 % in the range of 500 ∼ 900 nm. With the increase of Yb³⁺ doping concentration, the UV absorption cut-off edge is red shifted. The frequency doubling emission peak of Yb:SmCOB crystal at 490 nm was measured by 980 nm laser. Yb:SmCOB has the characteristics of high transmittance and high specific heat, and has application potential in laser frequency doubling and QPCPA.

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YbxSm1-xCa4O(BO3)3 晶体的生长、光学和热学特性

首次采用布里奇曼法生长出了 YbxSm1-xCOB (x = 0.1, 0.2) 晶体。本文旨在评估 Yb:SmCOB 晶体在准参数啁啾脉冲放大（QPCPA）和倍频激光器中的应用前景。研究了 Yb:SmCOB 的相结构、热学性质和光学性质，并用第一性原理计算了 SmCOB 晶体的态密度。Yb0.1Sm0.9COB和Yb0.2Sm0.8COB晶体的有效偏析系数Keff分别为0.89和0.88。Yb:SmCOB 的热扩散率和热导率随温度升高而降低。比热随温度升高而增加，最终趋于恒定。室温下，Yb:SmCOB 晶体的比热大于 0.70 J/(g-K)。在 500 ∼ 900 nm 范围内，Yb:SmCOB 晶体的透射率达到 87%。随着 Yb3+ 掺杂浓度的增加，紫外吸收截止边发生了红移。用 980 nm 激光测量了 Yb:SmCOB 晶体在 490 nm 处的倍频发射峰。Yb:SmCOB 具有高透过率和高比热的特点，在激光倍频和 QPCPA 方面具有应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.