{"title":"Analysis of coupling effect between TID and SET in SOI Tri-Gate nanowire field-effect transistors.","authors":"Xilong Zhou, Chenyu Yin, Hongxia Liu, Shupeng Chen, Shulong Wang, Junjie Huang, Zhanpeng Yan, Chang Liu","doi":"10.1088/1361-6528/ad7f63","DOIUrl":null,"url":null,"abstract":"<p><p>This study investigates the response of nanowire field-effect transistors (NWFETs) to total ionizing dose (TID), single-event transient (SET), and their coupling effects in junctionless (JL), inversion (IM), and junctionless accumulation (AC) modes. The degradation of the three modes under irradiation and the effect of device bias configuration on the electrical properties of NWFETs are analyzed, and the different effects of SET on the three modes are compared. On this basis, the influence of TID on SET current generation and the charge collection mechanism are studied, and the changes in peak current, pulse width, and collected charge of transient current under different TIDs are compared. The results show that JL mode has the worst resistance to TID and SET coupling effects, followed by IM and AC modes.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/ad7f63","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This study investigates the response of nanowire field-effect transistors (NWFETs) to total ionizing dose (TID), single-event transient (SET), and their coupling effects in junctionless (JL), inversion (IM), and junctionless accumulation (AC) modes. The degradation of the three modes under irradiation and the effect of device bias configuration on the electrical properties of NWFETs are analyzed, and the different effects of SET on the three modes are compared. On this basis, the influence of TID on SET current generation and the charge collection mechanism are studied, and the changes in peak current, pulse width, and collected charge of transient current under different TIDs are compared. The results show that JL mode has the worst resistance to TID and SET coupling effects, followed by IM and AC modes.
本研究探讨了纳米线场效应晶体管（NWFET）对总电离剂量（TID）、单次瞬态（SET）的响应及其在无结
（JL）、反转（IM）和无结累积（AC）模式下的耦合效应。在此基础上，研究了 TID 对 SET 电流产生和电荷收集机制的影响，并比较了不同 TID 下瞬态电流的峰值电流、脉宽和收集电荷的变化。结果表明，JL 模式抗 TID 和 SET 耦合效应的能力最差，其次是 IM 和 AC 模式。
期刊介绍：
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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