Quantitative modeling of perovskite-based direct X-ray flat panel detectors.

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Frontiers of Optoelectronics Pub Date : 2024-09-26 DOI:10.1007/s12200-024-00136-0

Zihao Song, Gaozhu Wang, Jincong Pang, Zhiping Zheng, Ling Xu, Ying Zhou, Guangda Niu, Jiang Tang

{"title":"Quantitative modeling of perovskite-based direct X-ray flat panel detectors.","authors":"Zihao Song, Gaozhu Wang, Jincong Pang, Zhiping Zheng, Ling Xu, Ying Zhou, Guangda Niu, Jiang Tang","doi":"10.1007/s12200-024-00136-0","DOIUrl":null,"url":null,"abstract":"Direct X-ray detectors based on semiconductors have drawn great attention from researchers in the pursuing of higher imaging quality. However, many previous works focused on the optimization of detection performances but seldomly watch them in an overall view and analyze how they will influence the detective quantum efficiency (DQE) value. Here, we propose a numerical model which shows the quantitative relationship between DQE and the properties of X-ray detectors and electric circuits. Our results point out that pursuing high sensitivity only is meaningless. To reduce the medical X-ray dose by 80%, the requirement for X-ray sensitivity is only at a magnitude of 103 μCGy-1⋅cm-2. To achieve the DQE = 0.7 at X-ray sensitivity air from 1248 to 8171 μCGy-1air⋅cm-2, the requirements on dark current density ranges from 10 to 100 nA⋅cm-2 and the fluctuation of current density should fall in 0.21 to 1.37 nA⋅cm-2.","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"17 1","pages":"32"},"PeriodicalIF":4.1000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11427676/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers of Optoelectronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s12200-024-00136-0","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Direct X-ray detectors based on semiconductors have drawn great attention from researchers in the pursuing of higher imaging quality. However, many previous works focused on the optimization of detection performances but seldomly watch them in an overall view and analyze how they will influence the detective quantum efficiency (DQE) value. Here, we propose a numerical model which shows the quantitative relationship between DQE and the properties of X-ray detectors and electric circuits. Our results point out that pursuing high sensitivity only is meaningless. To reduce the medical X-ray dose by 80%, the requirement for X-ray sensitivity is only at a magnitude of 10³ μCGy^-1⋅cm^-2. To achieve the DQE = 0.7 at X-ray sensitivity air from 1248 to 8171 μCGy^-1_air⋅cm^-2, the requirements on dark current density ranges from 10 to 100 nA⋅cm^-2 and the fluctuation of current density should fall in 0.21 to 1.37 nA⋅cm^-2.

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基于包晶石的直接 X 射线平板探测器的定量建模。

基于半导体的直接 X 射线探测器在追求更高的成像质量方面引起了研究人员的极大关注。然而，以往的许多研究都侧重于探测性能的优化，却很少从整体上观察和分析它们将如何影响探测量子效率（DQE）值。在此，我们提出了一个数值模型，该模型显示了 DQE 与 X 射线探测器和电路特性之间的定量关系。我们的研究结果表明，仅仅追求高灵敏度是没有意义的。要将医用 X 射线剂量降低 80%，对 X 射线灵敏度的要求仅为 103 μCGy-1-cm-2。要在 X 射线灵敏度为 1248 至 8171 μCGy-1air⋅cm-2 的空气中达到 DQE = 0.7，对暗电流密度的要求为 10 至 100 nA⋅cm-2 不等，电流密度的波动应在 0.21 至 1.37 nA⋅cm-2 之间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

7.80

自引率

0.00%

发文量

583

期刊介绍： Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more