Gyeongpyo Kim, Seoyoung Park, Minsuk Koo, Sungjun Kim
{"title":"Oxygen-Plasma-Treated Al/TaO<sub>X</sub>/Al Resistive Memory for Enhanced Synaptic Characteristics.","authors":"Gyeongpyo Kim, Seoyoung Park, Minsuk Koo, Sungjun Kim","doi":"10.3390/biomimetics9090578","DOIUrl":null,"url":null,"abstract":"<p><p>In this study, we investigate the impact of O<sub>2</sub> plasma treatment on the performance of Al/TaO<sub>X</sub>/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the differences in chemical composition between O<sub>2</sub>-plasma-treated and untreated RRAM cells. Direct-current measurements showed that O<sub>2</sub>-plasma-treated RRAM cells exhibited significant improvements over untreated RRAM cells, including higher on/off ratios, improved uniformity and distribution, longer retention times, and enhanced durability. The conduction mechanism is investigated by current-voltage (I-V) curve fitting. In addition, paired-pulse facilitation (PPF) is observed using partial short-term memory. Furthermore, 3- and 4-bit weight tuning with auto-pulse-tuning algorithms was achieved to improve the controllability of the synapse weight for the neuromorphic system, maintaining retention times exceeding 10<sup>3</sup> s in the multiple states. Neuromorphic simulation with an MNIST dataset is conducted to evaluate the synaptic device.</p>","PeriodicalId":8907,"journal":{"name":"Biomimetics","volume":"9 9","pages":""},"PeriodicalIF":3.4000,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11430571/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Biomimetics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.3390/biomimetics9090578","RegionNum":3,"RegionCategory":"医学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, we investigate the impact of O2 plasma treatment on the performance of Al/TaOX/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the differences in chemical composition between O2-plasma-treated and untreated RRAM cells. Direct-current measurements showed that O2-plasma-treated RRAM cells exhibited significant improvements over untreated RRAM cells, including higher on/off ratios, improved uniformity and distribution, longer retention times, and enhanced durability. The conduction mechanism is investigated by current-voltage (I-V) curve fitting. In addition, paired-pulse facilitation (PPF) is observed using partial short-term memory. Furthermore, 3- and 4-bit weight tuning with auto-pulse-tuning algorithms was achieved to improve the controllability of the synapse weight for the neuromorphic system, maintaining retention times exceeding 103 s in the multiple states. Neuromorphic simulation with an MNIST dataset is conducted to evaluate the synaptic device.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
