Structural characteristics of glycine aggregates grown under sub-Terahertz irradiation

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-09-19 DOI:10.1016/j.jcrysgro.2024.127889

Mana Kusama , Kazuma Iwasaki , Sho Fujii , Tsuyoshi Kimura , Masaya Yamamoto , Tadao Tanabe

引用次数: 0

Abstract

Although crystal growth methods in which intramolecular bonds are induced by infrared irradiation have been investigated recently, there is very little reported on the use of electromagnetic waves to enhance growth rates. In this study, we have irradiated with 40 GHz sub-Terahertz waves during the solution growth of glycine and investigated the effect on crystal growth. Highly crystalline α-glycine grew with or without irradiation and aggregates were formed. The growth rate, however, was strongly affected by sub-Terahertz wave irradiation, with the growth rate from nucleation approximately doubling. Powder X-ray structure analysis showed that the unique diffraction peaks of glycine tended to partially shift to lower angles, with the (−110) plane and (011) plane spacing expanding by about 0.1 % and 0.15 %, respectively. The FTIR results in the terahertz region show a large absorption near 6 THz, suggesting that the structure contains water molecules.

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亚太赫兹辐照下生长的甘氨酸聚合体的结构特征

虽然最近已经研究了通过红外辐照诱导分子内键的晶体生长方法，但关于利用电磁波提高生长速度的报道却很少。在这项研究中，我们在甘氨酸的溶液生长过程中使用了 40 GHz 亚太赫兹波进行辐照，并研究了其对晶体生长的影响。无论是否进行辐照，高结晶度的 α 甘氨酸都能生长，并形成聚集体。然而，次太赫兹波辐照对晶体生长速度的影响很大，从成核开始的生长速度大约增加了一倍。粉末 X 射线结构分析表明，甘氨酸的独特衍射峰有部分向低角度移动的趋势，(-110) 平面和 (011) 平面间距分别扩大了约 0.1 % 和 0.15 %。太赫兹区域的傅立叶变换红外光谱结果显示，在 6 太赫兹附近有大量吸收，表明该结构含有水分子。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.