A plant based electrochemical device with transistor like behavior

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
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Abstract

Since its invention, transistor has become the fundamental building block of virtually all of today’s integrated circuits which constitute the electronics technology. In the present letter, we report the vegetal version of a self-powered electrochemical transistor, i.e., a device with an inherent energy source which exhibits energy-converting and amplifying-modulating properties. Surprisingly, at the interface constituted by the surface of an n-type germanium sample and a vegetal slice it become apparent that the surface of the n-type germanium passing anodic current acts as a multiplying collector for holes. Experimental transconductance characteristics show well-defined the cut-off, active and saturation regions. Likewise, since the collector is itself part of an electrolytic cell, device incorporates its own power supply. Thereby, it is able to reproduce an analogical AC signal via the DC electrolytic cell voltage. Furthermore, one of the most outstanding properties of the transistors is their DC current gain (hFE), which for commercially available small-signal transistors typically ranges 50–350, and for medium power transistors 15–70. The proposed device presents an hFE of 70 and 40 for the potato and apple based transistors respectively. Genuinely, this approach opens an alternative route for the development of a novel green electronics based on self-powered vegetative devices. Genuinely, this approach opens an alternative route for the development of a novel green electronics based on self-powered vegetative devices which could works as sensing devices for monitoring living plants during sow and harvest.
具有类似晶体管行为的植物电化学装置
晶体管自发明以来,已成为当今电子技术中几乎所有集成电路的基本构件。在这封信中,我们报告了自供电电化学晶体管的植物版本,即一种具有固有能源的装置,它具有能量转换和放大调节特性。令人惊讶的是,在由 n 型锗样品表面和植物切片构成的界面上,通过阳极电流的 n 型锗表面显然起到了空穴倍增集电极的作用。实验中的跨导特性表明,截止区、活跃区和饱和区都非常清晰。同样,由于集电极本身就是电解槽的一部分,因此该器件还自带电源。因此,它能够通过直流电解槽电压再现模拟交流信号。此外,晶体管最突出的特性之一是其直流电流增益(hFE),市售小信号晶体管的 hFE 通常为 50-350,中功率晶体管为 15-70。对于基于马铃薯和苹果的晶体管,所提出的器件的 hFE 分别为 70 和 40。实际上,这种方法为开发基于自供电植物器件的新型绿色电子器件开辟了另一条途径。这一方法为开发基于自供电植物器件的新型绿色电子器件开辟了另一条途径,这种器件可用作在播种和收获期间监测活体植物的传感设备。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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