Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator

IF 20.6 Q1 OPTICS
Hang Chen
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引用次数: 0

Abstract

A novel non-volatile photonic-electronic memory, 3D integrating an Al-doped HfO2 ferroelectric thin film onto a silicon photonic platform using fully compatible electronic and photonic fabrication processes, enables electrically/optically programmable, non-destructively readable, and multi-level storage functions.

Abstract Image

通过三维单片铁电硅环谐振器实现非易失性光子电子存储器
一种新型非易失性光子电子存储器,采用完全兼容的电子和光子制造工艺,将铝掺杂的 HfO2 铁电薄膜 3D 集成到硅光子平台上,实现了电/光可编程、不可破坏性读取和多级存储功能。
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来源期刊
Light-Science & Applications
Light-Science & Applications 数理科学, 物理学I, 光学, 凝聚态物性 II :电子结构、电学、磁学和光学性质, 无机非金属材料, 无机非金属类光电信息与功能材料, 工程与材料, 信息科学, 光学和光电子学, 光学和光电子材料, 非线性光学与量子光学
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发文量
803
审稿时长
2.1 months
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