{"title":"Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator","authors":"Hang Chen","doi":"10.1038/s41377-024-01625-9","DOIUrl":null,"url":null,"abstract":"<p>A novel non-volatile photonic-electronic memory, 3D integrating an Al-doped HfO<sub>2</sub> ferroelectric thin film onto a silicon photonic platform using fully compatible electronic and photonic fabrication processes, enables electrically/optically programmable, non-destructively readable, and multi-level storage functions.</p>","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"36 1","pages":""},"PeriodicalIF":20.6000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Light-Science & Applications","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.1038/s41377-024-01625-9","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
A novel non-volatile photonic-electronic memory, 3D integrating an Al-doped HfO2 ferroelectric thin film onto a silicon photonic platform using fully compatible electronic and photonic fabrication processes, enables electrically/optically programmable, non-destructively readable, and multi-level storage functions.