The migration behaviour of strontium co-implanted with helium into SiC at room temperature and annealed at temperatures above 1000 °C

IF 3.8 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2024-09-24 DOI:10.1016/j.vacuum.2024.113676

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引用次数: 0

Abstract

The study investigated the migration behaviour of Sr implanted into SiC in the presence of helium (He). Sr ions were implanted into polycrystalline SiC samples (Sr-SiC) at room temperature (RT), and co-implanted with He ions also at RT (Sr + He-SiC). The samples were then annealed isochronally at 1100 °C, 1200 °C, and 1300 °C for 5 h. Transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) were used to characterize both as-implanted and annealed annealed samples. Sr implantation induced amorphization of SiC, while co-implantation with He led to the formation of He nano-bubbles within the amorphous SiC matrix. During annealing, Sr migrated towards the surface, resulting in loss of Sr, cavity formation, and formation of Sr precipitates in the Sr-SiC samples. In Sr + He-SiC samples, He-induced cavities formed around the projected range of Sr, inhibiting epitaxial regrowth of SiC. As a result, the Sr distribution became concentrated around these He cavities, with Sr trapped both in front and behind them. The enhanced migration of Sr in annealed Sr + He-SiC is attributed to the slower recrystallization of the damaged SiC layer, the presence of larger He-induced cavities, and increased surface roughness. These findings provide insights into Sr migration the mechanisms in SiC, relevant for enhancing the safety of nuclear fuels.

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锶与氦在室温下共同植入碳化硅并在 1000 °C 以上温度下退火的迁移行为

本研究调查了在氦（He）存在的情况下将锶植入碳化硅中的迁移行为。在室温（RT）下将硒离子植入多晶 SiC 样品（Sr-SiC），并在室温（RT）下与氦离子共同植入（Sr + He-SiC）。采用透射电子显微镜（TEM）和卢瑟福背散射光谱仪（RBS）对植入后和退火后的样品进行表征。Sr 植入会导致碳化硅发生非晶化，而与 He 共同植入则会在非晶碳化硅基体中形成 He 纳米气泡。在退火过程中，Sr 向表面迁移，导致 Sr-SiC 样品中的 Sr 损失、空腔形成和 Sr 沉淀的形成。在 Sr + He-SiC 样品中，He 引发的空腔在 Sr 的投影范围周围形成，抑制了 SiC 的外延再生长。因此，硒的分布集中在这些氦空穴周围，硒被截留在氦空穴的前面和后面。在退火的 Sr + He-SiC 中，Sr 的迁移增强，这归因于受损 SiC 层的再结晶速度减慢、存在更大的 He 引发的空穴以及表面粗糙度增加。这些发现有助于深入了解碳化硅中的硒迁移机制，从而提高核燃料的安全性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.