{"title":"Coupled mode theory-based analytical model of a ring resonator refractive index sensor incorporating bending loss and dispersion","authors":"Sanchit Kundal , Rakesh Kumar , Arpit Khandelwal , Kirankumar R. Hiremath","doi":"10.1016/j.photonics.2024.101308","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents an analytical model of a silicon nitride-based 2D ring resonator refractive index (RI) sensor using coupled mode theory (CMT). The proposed model decomposes the ring resonator into two coupling regions and employs coupled-mode equations to describe input and output amplitudes via scattering matrix analysis. The proposed sensor, operating with varying refractive indices in the background cladding, demonstrates a sensitivity of 218 nm/RIU and a total quality factor of 1198. A comprehensive analysis of the bending loss in the proposed sensor is conducted, elucidating its impact on sensitivity, coupling quality factor, and intrinsic quality factor. This analysis aids in the selection of optimal ring resonator parameters, including radius, width, and gap, to achieve superior sensing performance. Furthermore, the paper examines the effect of dispersion on sensitivity and quality and compares the results with those obtained from CMT-based silicon core ring resonator and disk resonator RI sensors. This study provides valuable insights for the design and optimization of high-performance silicon nitride-based RI sensors for various applications.</div></div>","PeriodicalId":49699,"journal":{"name":"Photonics and Nanostructures-Fundamentals and Applications","volume":null,"pages":null},"PeriodicalIF":2.5000,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photonics and Nanostructures-Fundamentals and Applications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S156944102400083X","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents an analytical model of a silicon nitride-based 2D ring resonator refractive index (RI) sensor using coupled mode theory (CMT). The proposed model decomposes the ring resonator into two coupling regions and employs coupled-mode equations to describe input and output amplitudes via scattering matrix analysis. The proposed sensor, operating with varying refractive indices in the background cladding, demonstrates a sensitivity of 218 nm/RIU and a total quality factor of 1198. A comprehensive analysis of the bending loss in the proposed sensor is conducted, elucidating its impact on sensitivity, coupling quality factor, and intrinsic quality factor. This analysis aids in the selection of optimal ring resonator parameters, including radius, width, and gap, to achieve superior sensing performance. Furthermore, the paper examines the effect of dispersion on sensitivity and quality and compares the results with those obtained from CMT-based silicon core ring resonator and disk resonator RI sensors. This study provides valuable insights for the design and optimization of high-performance silicon nitride-based RI sensors for various applications.
本文利用耦合模式理论(CMT)提出了氮化硅基二维环形谐振器折射率(RI)传感器的分析模型。提出的模型将环形谐振器分解为两个耦合区域,并通过散射矩阵分析采用耦合模式方程来描述输入和输出振幅。拟议的传感器在背景包层折射率变化的情况下工作,灵敏度为 218 nm/RIU,总品质因数为 1198。对拟议传感器中的弯曲损耗进行了全面分析,阐明了其对灵敏度、耦合品质因数和内在品质因数的影响。这一分析有助于选择最佳的环形谐振器参数,包括半径、宽度和间隙,以实现卓越的传感性能。此外,论文还研究了色散对灵敏度和质量的影响,并将结果与基于 CMT 的硅芯环形谐振器和盘形谐振器 RI 传感器的结果进行了比较。这项研究为设计和优化适用于各种应用的高性能氮化硅 RI 传感器提供了宝贵的见解。
期刊介绍:
This journal establishes a dedicated channel for physicists, material scientists, chemists, engineers and computer scientists who are interested in photonics and nanostructures, and especially in research related to photonic crystals, photonic band gaps and metamaterials. The Journal sheds light on the latest developments in this growing field of science that will see the emergence of faster telecommunications and ultimately computers that use light instead of electrons to connect components.