Regulation of Kv1.2 Redox-Sensitive Gating by the Transmembrane Lectin LMAN2.

IF 5.1 Q2 CELL BIOLOGY
Shawn M Lamothe, Damayantee Das, Anson A Wong, Yubin Hao, Aislinn D Maguire, Bradley J Kerr, Victoria A Baronas, Harley T Kurata
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Abstract

Voltage gated potassium (Kv)1.2 channels influence excitability and action potential propagation in the nervous system. Unlike closely related Kv1 channels, Kv1.2 exhibits highly variable voltage-dependence of gating, attributed to regulation by unidentified extrinsic factors. Variability of Kv1.2 gating is strongly influenced by the extracellular redox potential, and we demonstrate that Kv1.2 currents in dorsal root ganglion sensory neurons exhibit similar variability and redox sensitivity as observed when the channel is heterologously expressed in cell lines. We used a functional screening approach to test the effects of candidate regulatory proteins on Kv1.2 gating, using patch clamp electrophysiology. Among 52 candidate genes tested, we observed that co-expression with the transmembrane lectin LMAN2 led to a pronounced gating shift of Kv1.2 activation to depolarized voltages in CHO and L(tk-) cell lines, accompanied by deceleration of activation kinetics. Overexpression of LMAN2 promoted a slow gating mode of Kv1.2 that mimics the functional outcomes of extracellular reducing conditions, and enhanced sensitivity to extracellular reducing agents. In contrast, shRNA-mediated knockdown of endogenous LMAN2 in cell lines reduced Kv1.2 redox sensitivity and gating variability. Kv1.2 sensitivity to LMAN2 is abolished by mutation of neighboring residues F251 and T252 in the intracellular S2-S3 linker, and these also abolish redox-dependent gating changes, suggesting that LMAN2 influences the same pathway as redox for Kv1.2 modulation. In conclusion, we identified LMAN2 as a candidate regulatory protein that influences redox-dependent modulation of Kv1.2, and clarified the structural elements of the channel that are required for sensitivity.

跨膜凝集素 LMAN2 对 Kv1.2 氧化还原敏感门控的调控
Kv1.2 钾通道影响神经系统的兴奋性和动作电位传播。与密切相关的 Kv1 通道不同,Kv1.2 的门控表现出高度可变的电压依赖性,这归因于不明外在因素的调节。Kv1.2 门控的可变性受到细胞外氧化还原电位的强烈影响,我们证明背根神经节感觉神经元中的 Kv1.2 电流表现出类似的可变性和氧化还原敏感性,这与在细胞系中异源表达该通道时观察到的情况相似。我们采用功能筛选方法,利用膜片钳电生理学测试候选调控蛋白对 Kv1.2 门控的影响。在测试的 52 个候选基因中,我们观察到与跨膜凝集素 LMAN2 共同表达会导致 CHO 和 L(tk-) 细胞系中的 Kv1.2 激活向去极化电压发生明显的门控转移,并伴随着激活动力学的减速。LMAN2 的过表达促进了 Kv1.2 的缓慢门控模式,这种模式模拟了细胞外还原条件的功能结果,并增强了对细胞外还原剂的敏感性。相反,在细胞系中以 shRNA 为介导敲除内源性 LMAN2 会降低 Kv1.2 的氧化还原敏感性和门控可变性。细胞内 S2-S3 连接器中相邻残基 F251 和 T252 的突变可消除 Kv1.2 对 LMAN2 的敏感性,这些突变也可消除氧化还原依赖性门控变化,这表明 LMAN2 与氧化还原对 Kv1.2 调节的影响途径相同。总之,我们发现 LMAN2 是影响 Kv1.2 氧化还原依赖性调控的候选调控蛋白,并阐明了敏感性所需的通道结构元素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
5.70
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0.00%
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审稿时长
3 weeks
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