Improved expressions of noise parameters for InP HEMTs

IF 1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Microwave and Optical Technology Letters Pub Date : 2024-09-19 DOI:10.1002/mop.34320

Yuanting Lyu, Zhichun Li, Ao Zhang, Jianjun Gao

引用次数: 0

Abstract

In this article, we propose a set of new expressions of four noise parameters for InP high electron mobility transistor (HEMT) devices based on PRC noise equivalent circuit model. The effects of gate-to-drain capacitance, drain-to-source conductance as well as extrinsic resistances have been taken into account. High consistency between measured and modeled noise parameters for 70 nm HEMT with 2 × 30 μm gate width in the frequency range 8–50 GHz are given by the expressions. Great usability is demonstrated for determination of small signal and noise model parameters extraction.

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InP HEMT 噪声参数的改进表达式

本文基于 PRC 噪声等效电路模型，提出了一套 InP 高电子迁移率晶体管 (HEMT) 器件四个噪声参数的新表达式。栅极到漏极电容、漏极到源极电导以及外电阻的影响都已考虑在内。对于频率范围为 8-50 GHz、栅宽为 2 × 30 μm 的 70 nm HEMT，其噪声参数的测量值与建模值高度一致。在确定小信号和噪声模型参数提取方面，该方法具有很高的实用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microwave and Optical Technology Letters 工程技术-工程：电子与电气

CiteScore

3.40

自引率

20.00%

发文量

371

审稿时长

4.3 months

期刊介绍： Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication