High uniform N-type doping of 4H-SiC homoepitaxy based on a horizontal hot-wall reactor

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-09-04 DOI:10.1016/j.jcrysgro.2024.127877

Xiaoliang Gong , Ping Li , Tianle Xie , Fan Hu , Sai Ba , Liancheng Wang , Wenhui Zhu

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Abstract

A multi-physical coupling mathematical model of the reaction chamber was established based on a horizontal hot-wall SiC epitaxial reactor. Simulations were conducted to analyze the distribution characteristics of the temperature and flow field in the chamber. Subsequently, a series of process experiments were designed to systematically investigate the impact of key process parameters such as C/Si ratio, growth temperature, and carrier H₂ flow rate on the doping concentration and its distribution of 6-inch N-type 4H-SiC homoepitaxy. The relationships between these main process parameters and phenomena such as “site-competition epitaxy”, “loss along the path” and “W-shaped” doping distribution were analyzed comprehensively. By combining simulation results with experimental analysis, optimal epitaxial process parameters were determined, resulting in a significant improvement in doping uniformity to 2.7 % and the preparation of high-quality epitaxial wafer, surpassing industry standards.

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基于水平热壁反应器的 4H-SiC 均质外延的高均匀 N 型掺杂

以水平热壁碳化硅外延反应器为基础，建立了反应室的多物理耦合数学模型。模拟分析了反应腔内温度和流场的分布特征。随后，设计了一系列工艺实验，系统研究了 C/Si 比率、生长温度和载流子 H2 流速等关键工艺参数对 6 英寸 N 型 4H-SiC 同源外延的掺杂浓度及其分布的影响。全面分析了这些主要工艺参数与 "位点竞争外延"、"沿路径损耗 "和 "W 型 "掺杂分布等现象之间的关系。通过将模拟结果与实验分析相结合，确定了最佳外延工艺参数，使掺杂均匀度显著提高到 2.7%，制备出高质量的外延片，超过了行业标准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.