Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates

IF 2.1 4区化学 Q3 CHEMISTRY, PHYSICAL

Surface Science Pub Date : 2024-09-19 DOI:10.1016/j.susc.2024.122607

Dawid Jarosz , Ewa Bobko , Marcin Stachowicz , Ewa Przeździecka , Piotr Krzemiński , Marta Ruszała , Anna Juś , Małgorzata Trzyna-Sowa , Kinga Maś , Renata Wojnarowska-Nowak , Oskar Nowak , Daria Gudyka , Brajan Tabor , Michał Marchewka

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Abstract

This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three different methods: metamorphic, interfacial misfit (IMF) matrix, and a method based on a Polish patent application number P.443805. The first two methods are commonly used, while the third differs in the sequence of successive steps and the presence of Be doping at the initial growth stage. By comparing GaSb layers made by these methods for the same growth parameters, the most favorable procedure for forming a GaSb buffer layer is selected. Using GaAs substrates with a GaSb buffer layer is a cheaper alternative to using GaSb substrates in infrared detector structures based on II-type superlattices T2SL, such as InAs/GaSb. The quality of the GaSb buffer layer determines the quality of the subsequent layers that form the entire T2SL and affects factors such as dark current in terms of application.

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通过分子束外延 (MBE) 沉积在砷化镓（100）衬底上的 GaSb 外延层的表面形貌演变

本研究展示了使用三种不同方法在砷化镓（GaAs）（100）基底上沉积锑化镓（GaSb）层的表面形态行为：变质法、界面错位（IMF）基质法和基于波兰专利申请号 P.443805 的方法。前两种方法是常用的，而第三种方法的不同之处在于连续步骤的顺序以及在初始生长阶段掺入 Be 的情况。通过比较在相同生长参数下用这些方法制造的镓硒化物层，可以选择最有利于形成镓硒化物缓冲层的程序。在基于 II 型超晶格 T2SL（如 InAs/GaSb）的红外探测器结构中，使用带有 GaSb 缓冲层的 GaAs 衬底比使用 GaSb 衬底更便宜。GaSb 缓冲层的质量决定了构成整个 T2SL 的后续层的质量，并影响暗电流等应用因素。

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来源期刊

Surface Science 化学-物理：凝聚态物理

CiteScore

3.30

自引率

5.30%

发文量

137

审稿时长

25 days

期刊介绍： Surface Science is devoted to elucidating the fundamental aspects of chemistry and physics occurring at a wide range of surfaces and interfaces and to disseminating this knowledge fast. The journal welcomes a broad spectrum of topics, including but not limited to: • model systems (e.g. in Ultra High Vacuum) under well-controlled reactive conditions • nanoscale science and engineering, including manipulation of matter at the atomic/molecular scale and assembly phenomena • reactivity of surfaces as related to various applied areas including heterogeneous catalysis, chemistry at electrified interfaces, and semiconductors functionalization • phenomena at interfaces relevant to energy storage and conversion, and fuels production and utilization • surface reactivity for environmental protection and pollution remediation • interactions at surfaces of soft matter, including polymers and biomaterials. Both experimental and theoretical work, including modeling, is within the scope of the journal. Work published in Surface Science reaches a wide readership, from chemistry and physics to biology and materials science and engineering, providing an excellent forum for cross-fertilization of ideas and broad dissemination of scientific discoveries.