{"title":"Enhanced thermoelectric performance in p-type AgBiSe2 through carrier concentration optimization and valence band modification","authors":"Hao-Ming Liu, Xiu-Qun Wu, Jia-Yan Sun, Shan Li, Jun-Xiong Zhang, Xin-Li Ye, Qian Zhang","doi":"10.1007/s12598-024-02986-1","DOIUrl":null,"url":null,"abstract":"<p>Realizing the high thermoelectric performance of p-type AgBiSe<sub>2</sub>-based materials has been challenging due to their low p-type dopability. This work demonstrated that Cd doping at the Bi site converts n-type AgBiSe<sub>2</sub> to p-type. The hole concentration is effectively increased with increasing Cd doping content, thereby enhancing the electrical conductivity. Theoretical calculations reveal that Cd doping flattens the edge of the valence band, resulting in an increase in the density-of-states effective mass and Seebeck coefficient. A record-high power factor of ~ 6.2 µW⋅cm<sup>−1</sup>⋅K<sup>−2</sup> was achieved at room temperature. Furthermore, the induced dislocations enhance the phonon scattering, contributing to the ultralow lattice thermal conductivity across the entire temperature range. As a result, a decent figure of merit (<i>zT</i>) of ~ 0.3 at room temperature and a peak <i>zT</i> of ~ 0.5 at 443 K were obtained in AgBi<sub>0.92</sub>Cd<sub>0.08</sub>Se<sub>2</sub>. Our work provides a feasible method for optimizing the thermoelectric performance of p-type AgBiSe<sub>2</sub>.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>\n","PeriodicalId":749,"journal":{"name":"Rare Metals","volume":null,"pages":null},"PeriodicalIF":9.6000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rare Metals","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s12598-024-02986-1","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Realizing the high thermoelectric performance of p-type AgBiSe2-based materials has been challenging due to their low p-type dopability. This work demonstrated that Cd doping at the Bi site converts n-type AgBiSe2 to p-type. The hole concentration is effectively increased with increasing Cd doping content, thereby enhancing the electrical conductivity. Theoretical calculations reveal that Cd doping flattens the edge of the valence band, resulting in an increase in the density-of-states effective mass and Seebeck coefficient. A record-high power factor of ~ 6.2 µW⋅cm−1⋅K−2 was achieved at room temperature. Furthermore, the induced dislocations enhance the phonon scattering, contributing to the ultralow lattice thermal conductivity across the entire temperature range. As a result, a decent figure of merit (zT) of ~ 0.3 at room temperature and a peak zT of ~ 0.5 at 443 K were obtained in AgBi0.92Cd0.08Se2. Our work provides a feasible method for optimizing the thermoelectric performance of p-type AgBiSe2.
期刊介绍：
Rare Metals is a monthly peer-reviewed journal published by the Nonferrous Metals Society of China. It serves as a platform for engineers and scientists to communicate and disseminate original research articles in the field of rare metals. The journal focuses on a wide range of topics including metallurgy, processing, and determination of rare metals. Additionally, it showcases the application of rare metals in advanced materials such as superconductors, semiconductors, composites, and ceramics.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
