Impact of c- and m- sapphire plane orientations on the structural and electrical properties of β-Ga2O3 thin films grown by metal-organic chemical vapor deposition
E Serquen, F Bravo, Z Chi, L A Enrique, K Lizárraga, C Sartel, E Chikoidze and J A Guerra
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引用次数: 0
Abstract
This work presents a comprehensive investigation into the structural and electrical properties of Ga2O3 thin films grown via metal-organic chemical vapor deposition on both c- and m-plane sapphire substrates. Structural characterization revealed the β-Ga2O3 phase formation in both substrate orientations, with strong epitaxial preferential growth on c-plane substrates and polycrystalline films on m-plane substrates. Results show that Ga2O3/m-sapphire exhibits the lower electrical resistivity than its counterpart grown on c-sapphire. Activation energies of acceptor levels were estimated at ~1.4 and ~0.7 , for Ga2O3 films grown on c- and m-plane, respectively. This result shows that growing Ga2O3 on m-plane sapphire is beneficial to reach a weakly compensated sample. Cathodoluminescence analysis suggests that the additional low activation energy of ~0.18 observed in Ga2O3 grown with the highest oxygen flow on m-plane sapphire can be associated to thermally-induced migration of self-trapped hole states.
这项研究全面考察了通过金属有机化学气相沉积法在 c 面和 m 面蓝宝石衬底上生长的 Ga2O3 薄膜的结构和电气特性。结构表征结果表明,在两种衬底方向上都形成了β-Ga2O3相,在c面衬底上有强烈的优先外延生长,而在m面衬底上则形成了多晶薄膜。结果表明,Ga2O3/m-蓝宝石的电阻率低于在 c-蓝宝石上生长的同类薄膜。在 c 平面和 m 平面上生长的 Ga2O3 薄膜的受体水平活化能估计分别为 ~1.4 和 ~0.7。这一结果表明,在 m 面蓝宝石上生长 Ga2O3 有利于获得弱补偿样品。阴极荧光分析表明,在 m 面蓝宝石上以最高氧流生长的 Ga2O3 中观察到的 ~0.18 的额外低活化能可能与自捕获空穴态的热诱导迁移有关。
期刊介绍:
This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.