Performance Improvement of Enhanced-Mode β-Ga2O3 MOSFETs by Partial Gate Recess Structure

IF 5.4 3区材料科学 Q2 CHEMISTRY, PHYSICAL

ACS Applied Energy Materials Pub Date : 2024-09-17 DOI:10.1021/acsaelm.4c00835

Yueh-Han Chuang, Fu-Gow Tarntair, Pei-Jung Wang, Tian-Li Wu, Niall Tumilty, Ray-Hua Horng

{"title":"Performance Improvement of Enhanced-Mode β-Ga2O3 MOSFETs by Partial Gate Recess Structure","authors":"Yueh-Han Chuang, Fu-Gow Tarntair, Pei-Jung Wang, Tian-Li Wu, Niall Tumilty, Ray-Hua Horng","doi":"10.1021/acsaelm.4c00835","DOIUrl":null,"url":null,"abstract":"In this study, β-Ga2O3 films were grown on the c-plane sapphire substrate by metal–organic chemical vapor deposition. Gate-recessed heteroepitaxial β-Ga2O3 metal oxide semiconductor field effect transistors (MOSFETs) were fabricated to achieve enhanced mode operation. It was found that the conductivity of Ga2O3 films can be further improved by in situ doping and a partial gate recess. Output current increased from 4.21 to 5.76 mA/mm, Ron.sp decreased from 392 mΩ.cm2 to 238 mΩ.cm2,and μFE increased from 15 cm2/(V s) to 19.9 cm2/(V s) for MOSFETs with partial gate recesses of 7 and 5 μm, respectively. Device threshold voltages are positive, possessing low Ron and impressive ID on/off ratios. Breakdown voltage was increased using a gate field plate. In summary, device performance was improved using shorter gate recesses for enhanced mode β-Ga2O3 MOSFETs.","PeriodicalId":4,"journal":{"name":"ACS Applied Energy Materials","volume":null,"pages":null},"PeriodicalIF":5.4000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Energy Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsaelm.4c00835","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

Abstract

In this study, β-Ga₂O₃ films were grown on the c-plane sapphire substrate by metal–organic chemical vapor deposition. Gate-recessed heteroepitaxial β-Ga₂O₃ metal oxide semiconductor field effect transistors (MOSFETs) were fabricated to achieve enhanced mode operation. It was found that the conductivity of Ga₂O₃ films can be further improved by in situ doping and a partial gate recess. Output current increased from 4.21 to 5.76 mA/mm, R_on.sp decreased from 392 mΩ.cm² to 238 mΩ.cm²,and μ_FE increased from 15 cm²/(V s) to 19.9 cm²/(V s) for MOSFETs with partial gate recesses of 7 and 5 μm, respectively. Device threshold voltages are positive, possessing low R_on and impressive I_D on/off ratios. Breakdown voltage was increased using a gate field plate. In summary, device performance was improved using shorter gate recesses for enhanced mode β-Ga₂O₃ MOSFETs.

Abstract Image

查看原文本刊更多论文

利用部分栅极凹槽结构提高增强型β-Ga2O3 MOSFET 的性能

本研究采用金属有机化学气相沉积法在 c 平面蓝宝石衬底上生长了 β-Ga2O3 薄膜。通过制作栅极后置异外延 β-Ga2O3 金属氧化物半导体场效应晶体管 (MOSFET)，实现了增强模式工作。研究发现，通过原位掺杂和部分栅极凹槽，可以进一步提高 Ga2O3 薄膜的导电性。输出电流从 4.21 mA/mm 增加到 5.76 mA/mm，Ron.sp 从 392 mΩ.cm2 下降到 238 mΩ.cm2，μFE 从 15 cm2/(V s) 增加到 19.9 cm2/(V s)。器件阈值电压为正值，具有低罗恩和令人印象深刻的 ID 开/关比。利用栅极场板提高了击穿电压。总之，对于增强型模式 β-Ga2O3 MOSFET，使用较短的栅极凹槽可提高器件性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

ACS Applied Energy Materials Materials Science-Materials Chemistry

CiteScore

10.30

自引率

6.20%

发文量

1368

期刊介绍： ACS Applied Energy Materials is an interdisciplinary journal publishing original research covering all aspects of materials, engineering, chemistry, physics and biology relevant to energy conversion and storage. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important energy applications.