Performance Improvement of Enhanced-Mode β-Ga2O3 MOSFETs by Partial Gate Recess Structure

IF 4.3 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials Pub Date : 2024-09-17 DOI:10.1021/acsaelm.4c00835

Yueh-Han Chuang, Fu-Gow Tarntair, Pei-Jung Wang, Tian-Li Wu, Niall Tumilty, Ray-Hua Horng

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Abstract

In this study, β-Ga₂O₃ films were grown on the c-plane sapphire substrate by metal–organic chemical vapor deposition. Gate-recessed heteroepitaxial β-Ga₂O₃ metal oxide semiconductor field effect transistors (MOSFETs) were fabricated to achieve enhanced mode operation. It was found that the conductivity of Ga₂O₃ films can be further improved by in situ doping and a partial gate recess. Output current increased from 4.21 to 5.76 mA/mm, R_on.sp decreased from 392 mΩ.cm² to 238 mΩ.cm²,and μ_FE increased from 15 cm²/(V s) to 19.9 cm²/(V s) for MOSFETs with partial gate recesses of 7 and 5 μm, respectively. Device threshold voltages are positive, possessing low R_on and impressive I_D on/off ratios. Breakdown voltage was increased using a gate field plate. In summary, device performance was improved using shorter gate recesses for enhanced mode β-Ga₂O₃ MOSFETs.

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利用部分栅极凹槽结构提高增强型β-Ga2O3 MOSFET 的性能

本研究采用金属有机化学气相沉积法在 c 平面蓝宝石衬底上生长了 β-Ga2O3 薄膜。通过制作栅极后置异外延 β-Ga2O3 金属氧化物半导体场效应晶体管 (MOSFET)，实现了增强模式工作。研究发现，通过原位掺杂和部分栅极凹槽，可以进一步提高 Ga2O3 薄膜的导电性。输出电流从 4.21 mA/mm 增加到 5.76 mA/mm，Ron.sp 从 392 mΩ.cm2 下降到 238 mΩ.cm2，μFE 从 15 cm2/(V s) 增加到 19.9 cm2/(V s)。器件阈值电压为正值，具有低罗恩和令人印象深刻的 ID 开/关比。利用栅极场板提高了击穿电压。总之，对于增强型模式 β-Ga2O3 MOSFET，使用较短的栅极凹槽可提高器件性能。

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来源期刊

ACS Applied Electronic Materials Multiple-

CiteScore

7.20

自引率

4.30%

发文量

567