Current Generation in Pd/InP Structures in Hydrogen Medium

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040134

V. A. Shutaev, V. G. Sidorov, E. A. Grebenshchikova, Yu. P. Yakovlev

引用次数: 0

Abstract

The electrical properties of Pd/InP Schottky diodes and Pd-layers deposited on glass substrate by thermal evaporation in vacuum, and placed in hydrogen medium containing 10–100 vol % of hydrogen, were studied. The current generation in Pd/InP Schottky diodes, as well as the decrease in resistance of Pd layers were observed in hydrogen medium. It is proposed that the current generation in the structures under study is due to free electrons as result of hydrogen atoms ionization. The current induced by these electrons exists in electric circuit until hydrogen is present in the environment. It is shown that the hydrogen current generators can be created based on the Pd/InP diode structure.

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氢介质中 Pd/InP 结构的电流产生

摘要研究了在真空中通过热蒸发沉积在玻璃基板上的 Pd/InP 肖特基二极管和 Pd 层的电学特性，并将其置于含氢量为 10-100 vol % 的氢介质中。在氢介质中观察到 Pd/InP 肖特基二极管中电流的产生以及 Pd 层电阻的降低。据推测，所研究结构中电流的产生是由于氢原子电离产生的自由电子。这些电子诱导的电流存在于电路中，直到环境中存在氢。研究表明，氢电流发生器可以在 Pd/InP 二极管结构的基础上创建。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.