Surface Morphology of AlN Layers Grown on a Nano-Structured SiNx/Si(100) Template

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040031

V. N. Bessolov, E. V. Konenkova, S. N. Rodin, A. V. Solomnikova

引用次数: 0

Abstract

The morphology of ALN layers grown by Metalorganic Chemical Vapor Deposition on nano-structured NP-Si(001) substrates coated with SiN_x has been studied using atomic force microscopy. The AlN layers grown on the SiN_x/NP-Si(100) template demonstrate a surface roughness 3.8 times less than those obtained on NP-Si(100), and are close to the roughness value for the AlN layer grown on a flat Si(111) substrate. It has been proposed a model to explain the differences in the formation of the surface morphology of AlN layers on the NP-Si(100) substrate and the SiN_x/NP-Si(100) template.

Abstract Image

查看原文本刊更多论文

纳米结构 SiNx/Si(100)模板上生长的氮化铝层表面形态学

摘要利用原子力显微镜研究了在涂有 SiNx 的纳米结构 NP-Si(001)衬底上通过金属有机化学气相沉积生长的 ALN 层的形貌。在 SiNx/NP-Si(100) 模板上生长的氮化铝层的表面粗糙度是在 NP-Si(100) 上生长的氮化铝层的 3.8 倍，接近在平坦的 Si(111) 基质上生长的氮化铝层的粗糙度值。我们提出了一个模型来解释在 NP-Si(100)衬底和 SiNx/NP-Si(100) 模板上形成的 AlN 层表面形貌的差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.