B. Langa, D. Sapkota, I. Lainez, R. Haight, B. Srijanto, L. Feldman, H. Hijazi, X. Zhu, L. Hu, M. Kim, K. Sardashti
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引用次数: 0
Abstract
Hybrid superconductor–semiconductor materials systems are promising candidates for quantum computing applications. Their integration into superconducting electronics has enabled on-demand voltage tunability at millikelvin temperatures. Ge quantum wells have been among the semiconducting platforms interfaced with superconducting Al to realize voltage tunable Josephson junctions. Here, we explore Nb as a superconducting material in direct contact with Ge channels by focusing on the solid-state reactions at the Nb/Ge interfaces. We employ Nb evaporation at cryogenic temperatures (∼100 K) to establish a baseline structure with atomically and chemically abrupt Nb/Ge interfaces. By conducting systematic photoelectron spectroscopy and transport measurements on Nb/Ge samples across varying annealing temperatures, we elucidated the influence of Ge out-diffusion on the ultimate performance of superconducting electronics. This study underlines the need for low-temperature growth to minimize chemical intermixing and band bending at the Nb/Ge interfaces.
混合超导体-半导体材料系统是量子计算应用的理想候选材料。将它们集成到超导电子器件中,可以在毫开尔文温度下实现按需电压可调。Ge 量子阱是与超导 Al 相连接的半导体平台之一,可实现电压可调的约瑟夫森结。在这里,我们通过重点研究铌/锗界面的固态反应,探索铌作为超导材料与 Ge 沟道的直接接触。我们采用在低温(∼100 K)下蒸发铌的方法,建立了具有原子和化学突变铌/锗界面的基线结构。通过对不同退火温度下的 Nb/Ge 样品进行系统的光电子能谱和传输测量,我们阐明了 Ge 外扩散对超导电子器件最终性能的影响。这项研究强调了低温生长的必要性,以尽量减少铌/锗界面上的化学混杂和带弯曲。
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