Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates

IF 1.4 4区物理与天体物理 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

AIP Advances Pub Date : 2024-09-17 DOI:10.1063/5.0208706

Weiyi Jin, Yumin Zhang, Songyuan Xia, Qizhi Zhu, Yuanhang Sun, Juemin Yi, Jianfeng Wang, Ke Xu

引用次数: 0

Abstract

This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates. We elucidate dominant leakage mechanisms—thermionic emission, Poole–Frenkel emission, and variable-range hopping—and their evolution with temperature and bias. Optimized fabrication processes, including defect etching and a novel dual-layer passivation technique, achieve over a 1000-fold reduction in leakage current.

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在原生氮化镓衬底上通过 HVPE 生长的氮化镓基垂直氮化镓 SBD 中的泄漏电流

本研究调查了垂直氮化镓-氮化镓肖特基势垒二极管（SBD）的漏电机制，并展示了有效的缓解策略。所制备的器件具有较低的反向漏电流（-200 V 时为 1 × 10-5 A/cm2 ）和较高的离子/关断比（∼1010），其性能超过了国外衬底上的 GaN SBD。我们阐明了主要的漏电机制--热离子发射、普尔-弗伦克尔发射和变程跳变--及其随温度和偏压的演变。优化的制造工艺（包括缺陷蚀刻和新型双层钝化技术）使漏电流降低了 1000 多倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

AIP Advances NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

2.80

自引率

6.20%

发文量

1233

审稿时长

2-4 weeks

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