Evaporated Copper-Based Perovskite Dynamic Memristors for Reservoir Computing Systems

Ruiheng Wang, He Shao, Jianyu Ming, Wei Yang, Jintao Sun, Benxin Liu, Siqi Wu, Haifeng Ling
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Abstract

Dynamic memristors are considered as the optimal hardware devices for reservoir computing (RC) enabled by their nonlinear conductance variations. This significantly reduces the extensive training workload typically required by traditional neural networks. Lead halide perovskites, with their tunable band structure and active ion migration properties, have emerged as highly promising materials for developing dynamic memristors. However, large-scale and consistently stable production remains a challenge for perovskite functional films, while lead elements' toxicity and environmental impact also partly restrict their practical device utilization. In this work, lead-free copper-based perovskite (i.e., CsCu2I3) films are prepared by thermal evaporation for constructing dynamic memristors. The effective conductivity modulation of CsCu2I3-based memristor can be utilized in artificial neural networks, achieving a high handwritten digit recognition accuracy of 91.2%. In addition, the RC system is also constructed based on the dynamic behavior of the devices, by which a letter recognition accuracy of 98.2% with simple training is achieved. This technology provides a feasible pathway to construct copper-based perovskite dynamic memristors for future neural network information processing.

Abstract Image

用于水库计算系统的蒸发铜基 Perovskite 动态晶闸管
动态忆阻器因其非线性电导变化而被视为水库计算(RC)的最佳硬件设备。这大大减少了传统神经网络通常需要的大量训练工作量。卤化铅包晶石具有可调带状结构和活性离子迁移特性,已成为开发动态忆阻器的极有前途的材料。然而,大规模和持续稳定的生产仍然是包晶功能薄膜所面临的挑战,而铅元素的毒性和对环境的影响也在一定程度上限制了它们在实际器件中的应用。本研究通过热蒸发法制备了无铅铜基透辉石(即 CsCu2I3)薄膜,用于构建动态忆阻器。基于 CsCu2I3 的忆阻器的有效电导率调制可用于人工神经网络,实现高达 91.2% 的手写数字识别准确率。此外,还根据器件的动态行为构建了 RC 系统,通过简单的训练实现了 98.2% 的字母识别准确率。这项技术为构建铜基过氧化物动态忆阻器提供了一条可行的途径,可用于未来的神经网络信息处理。
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