High-performance CsPbBr3-xClx/Si heterojunction photodetectors for variable wavelength photodetection

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-09-19 DOI:10.1007/s10854-024-13502-7

Wanggao Nie, Jingyi Liu, Lairong Yan, Hao Hu, Ping Lin, Yanbin Zhang, Lingbo Xu, Peng Wang, Xiaoping Wu, Can Cui

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Abstract

All inorganic perovskite CsPbX₃ (X = Br, I, Cl) materials emerge as one of the popular materials in the field of optoelectronic devices due to their outstanding photoelectric properties. Their photoelectric detection performance and stability could be further improved by combining mixed halide perovskites with other semiconductor materials, achieving high-performance variable wavelength photodetectors. In this work, high-quality CsPbBr_3-xCl_x microcrystals were successfully grown on silicon (Si) substrates by chemical vapor deposition (CVD) method. By varying the Br/Cl ratio, the prepared CsPbBr_3-xCl_x heterojunction photodetectors exhibit excellent response time in the scale of microsecond and superior narrowband detection capability in a wide wavelength ranges and excellent environmental stability, achieving the maximum responsivity of 102.6 A/W and detectivity of 5.20 × 10¹² Jones under 7.8µW /cm² light illumination intensity. The results suggest an efficient and feasible strategy to the design and improvement of photodetectors for variable wavelength photodetection.

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用于可变波长光电探测的高性能铯硼铍3-xClx/硅异质结光电探测器

全无机包晶 CsPbX3（X = Br、I、Cl）材料因其出色的光电特性而成为光电器件领域的热门材料之一。通过将混合卤化物包晶与其他半导体材料相结合，可进一步提高其光电探测性能和稳定性，从而实现高性能的可变波长光电探测器。本研究采用化学气相沉积（CVD）方法，在硅（Si）衬底上成功生长出高质量的 CsPbBr3-xClx 微晶。通过改变 Br/Cl 的比例，所制备的 CsPbBr3-xClx 异质结光电探测器在 7.8µW /cm2 的光照强度下，实现了 102.6 A/W 的最大响应率和 5.20 × 1012 Jones 的探测率，在微秒级的响应时间和宽波长范围内表现出卓越的窄带探测能力和良好的环境稳定性。这些结果为设计和改进用于可变波长光电探测的光电探测器提出了一种高效可行的策略。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.