Ta5+-substitution effects on crystal structure and ferroelectric property in HfO2-based films

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-09-16 DOI:10.35848/1347-4065/ad6fa9

Yoshiki Maekawa, Takanori Mimura, Yoshiyuki Inaguma, Hiroshi Uchida, Yuxian Hu, Kazuki Okamoto and Hiroshi Funakubo

{"title":"Ta5+-substitution effects on crystal structure and ferroelectric property in HfO2-based films","authors":"Yoshiki Maekawa, Takanori Mimura, Yoshiyuki Inaguma, Hiroshi Uchida, Yuxian Hu, Kazuki Okamoto and Hiroshi Funakubo","doi":"10.35848/1347-4065/ad6fa9","DOIUrl":null,"url":null,"abstract":"To investigate the Ta5+-substitution effects on crystal structure and ferroelectric property in HfO2-based films, TaxHf1−xO2+δ films with various film thicknesses and Ta content were prepared. The ferroelectric orthorhombic phase was formed in a wide film thickness range of 20–100 nm while in a narrow composition range of x = 0.10–0.14. These thickness-insensitive and composition-sensitive characteristics of Ta5+-substituted HfO2 film are similar to Y3+ rather than Zr4+. The X-ray photoelectron spectroscopy measurement suggests that the ionic state of Ta is not reduced and TaxHf1−xO2+δ film has an excess oxygen state. The excess oxygen may consist of a combination of oxygen vacancies and more interstitial oxygens. These defects facilitate the formation of the ferroelectric phasebut also decrease the breakdown voltage and increase the leakage current in Ta5+-substituted HfO2 films. On the other hand, the generation of excess oxygen indicates the possibility of controlling oxygen vacancies which deteriorate fatigue and retention properties.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"9 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad6fa9","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

To investigate the Ta5+-substitution effects on crystal structure and ferroelectric property in HfO2-based films, TaxHf1−xO2+δ films with various film thicknesses and Ta content were prepared. The ferroelectric orthorhombic phase was formed in a wide film thickness range of 20–100 nm while in a narrow composition range of x = 0.10–0.14. These thickness-insensitive and composition-sensitive characteristics of Ta5+-substituted HfO2 film are similar to Y3+ rather than Zr4+. The X-ray photoelectron spectroscopy measurement suggests that the ionic state of Ta is not reduced and TaxHf1−xO2+δ film has an excess oxygen state. The excess oxygen may consist of a combination of oxygen vacancies and more interstitial oxygens. These defects facilitate the formation of the ferroelectric phasebut also decrease the breakdown voltage and increase the leakage current in Ta5+-substituted HfO2 films. On the other hand, the generation of excess oxygen indicates the possibility of controlling oxygen vacancies which deteriorate fatigue and retention properties.

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Ta5+ 取代对 HfO2 基薄膜晶体结构和铁电特性的影响

为了研究 Ta5+ 取代对 HfO2 基薄膜的晶体结构和铁电性质的影响，制备了不同膜厚和 Ta 含量的 TaxHf1-xO2+δ 薄膜。在 20-100 nm 的宽薄膜厚度范围和 x = 0.10-0.14 的窄成分范围内形成了铁电正交相。Ta5+ 取代的 HfO2 薄膜的这些厚度不敏感和成分敏感特性类似于 Y3+，而不是 Zr4+。X 射线光电子能谱测量结果表明，Ta 的离子态未被还原，TaxHf1-xO2+δ 薄膜具有过量氧态。过剩氧可能由氧空位和更多的间隙氧组成。这些缺陷促进了铁电相的形成，但也降低了 Ta5+ 取代的 HfO2 薄膜的击穿电压，增加了漏电流。另一方面，过量氧的产生表明有可能控制氧空位，而氧空位会恶化疲劳和保持性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS