Xuefeng Xiao, Yan Huang, Yan Zhang, Jiashun Si, Shuaijie Liang, Qingyan Xu, Huan Zhang, Lingling Ma, Cui Yang, Xuefeng Zhang, Jiayue Xu, Tian Tian and Hui Shen
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引用次数: 0
Abstract
This paper is based on the first principles of density functional theory and uses the virtual crystal approximation method to calculate and analyze the optical properties of differently proportioned Eu3+-doped Bismuth silicate (Bi4Si3O12, or BSO). The results show that minor Eu3+ doping (1/12–1/3) improves the polarization ability of BSO and reduces energy loss. Additionally, doping an appropriate amount of Eu3+ (1/12–1/3) can improve light absorption and transmission of BSO to some extent. That is to say, Eu3+ doping improves the response of BSO to infrared light, and the absorption capacity in the ultraviolet and visible light regions is also enhanced. The theoretical research in this paper elucidates the changes in the optical properties of BSO after doping with Eu3+, providing a theoretical basis for expanding its application as a scintillation crystal in high-energy physics experiments, nuclear medicine, and other fields.
期刊介绍:
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS