Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-09-18 DOI:10.1063/5.0230862

Yabin Mou, Jun Zhang, Yiwei Ma, Shi Huang, Hengdian Chang, Haonan Lin, Xuanyu Gu, Zhiyao Wu, Jiafei Yao, Kemeng Yang, Jing Chen, Man Li, Guobin Zhang, Song Bai, Yufeng Guo

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引用次数: 0

Abstract

The diketopyrrolopyrrole-based polymer (DPPT-TT) has been employed in organic power field effect transistors due to its exceptional off-state breakdown performance. The impact of organic semiconductor layer thickness on the breakdown performance has not been explored. In this study, we investigate the impact of DPPT-TT layer thickness on the breakdown voltage (BV) by fabricating organic field effect transistors (OFETs) with various DPPT-TT layer thicknesses. Our findings reveal that the devices' BV is a strong function of DPPT-TT layer thickness, and reducing the DPPT-TT layer thickness from 68 to 15 nm results in a decrease in BV from 291 to 86 V, attributed to the two-dimensional (2D) electric field crowding effect. An analytical model utilizing the 2D Poisson equation reveals an electric field at the DPPT-TT layer's surface. Thinner DPPT-TT layer exhibits larger electric field peak, leading to premature breakdown near the drain electrode. The relationship between breakdown electric field and DPPT-TT layer thickness was established by fitting the experimental data to the model, revealing an average BV error of only 8.8%. This phenomenon is validated to be ubiquitous in polymer based OFETs via DPPT-TT-based and P3HT-based devices. According to the proposed model, this 2D electric field crowding effect can be mitigated by adjusting the dielectric layer thickness (tD) and/or the dielectric material.

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揭示基于 DPPT-TT 聚合物的 OFET 击穿性能中的二维电场拥挤效应

基于二酮吡咯啉的聚合物（DPPT-TT）具有优异的离态击穿性能，已被用于有机功率场效应晶体管。有机半导体层厚度对击穿性能的影响尚未得到探讨。在本研究中，我们通过制造具有不同 DPPT-TT 层厚度的有机场效应晶体管 (OFET)，研究了 DPPT-TT 层厚度对击穿电压 (BV) 的影响。我们的研究结果表明，器件的击穿电压是 DPPT-TT 层厚度的强函数，将 DPPT-TT 层厚度从 68 纳米减至 15 纳米会导致击穿电压从 291 V 降至 86 V，这归因于二维（2D）电场拥挤效应。利用二维泊松方程建立的分析模型揭示了 DPPT-TT 层表面的电场。较薄的 DPPT-TT 层显示出较大的电场峰值，导致漏极附近过早击穿。通过将实验数据与模型拟合，建立了击穿电场与 DPPT-TT 层厚度之间的关系，发现平均 BV 误差仅为 8.8%。通过基于 DPPT-TT 和 P3HT 的器件，验证了这种现象在聚合物基 OFET 中普遍存在。根据所提出的模型，可以通过调整介电层厚度（tD）和/或介电材料来减轻这种二维电场拥挤效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.