Vector magnetometry employing a rotating RF field in a single-beam optically pumped magnetometer

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yuntian Zou , Liwei Jiang , Huijing Bai , Jiali Liu , Chi Fang , Jun Zhu , Qi Shao , Jinghong Xu , Xiangyang Zhou , Wei Quan
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Abstract

Magnetic field vector information is crucial for many advanced applications, such as navigation and biomedical imaging. However, existing methods often lack high sensitivity or require complex setups. This study addresses these challenges by proposing a novel vector magnetometry method using a single-beam optically pumped magnetometer. A rotating radio-frequency field is innovatively utilized to excite atomic spin precession, enabling accurate measurement of the magnetic field direction based on scalar measurement. The method is tested through physical experiments with different magnetic field configurations to validate its performance. The experimental results demonstrate high accuracy, and achieve a magnetic field amplitude sensitivity of 800 fT/Hz1/2, an azimuth sensitivity of 100 μrad/Hz1/2, and a polar angle sensitivity of 13 μrad/Hz1/2. The proposed method facilitates sensor miniaturization and is suitable for applications in high magnetic field environments, such as geomagnetic field.

Abstract Image

在单光束光泵磁强计中采用旋转射频场的矢量磁强计
磁场矢量信息对导航和生物医学成像等许多先进应用至关重要。然而,现有的方法往往缺乏高灵敏度或需要复杂的设置。本研究针对这些挑战,提出了一种使用单束光泵磁强计的新型矢量磁强计方法。该方法创新性地利用旋转射频场激发原子自旋前冲,从而在标量测量的基础上精确测量磁场方向。该方法通过不同磁场配置的物理实验进行测试,以验证其性能。实验结果表明,该方法具有很高的精度,磁场振幅灵敏度达到 800 fT/Hz1/2,方位角灵敏度达到 100 μrad/Hz1/2,极角灵敏度达到 13 μrad/Hz1/2。所提出的方法有利于传感器的微型化,适合在地磁场等高磁场环境中应用。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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