M. Raghu Ramaiah, R.G. Athira, Kishore K. Madapu, K. Prabakar, S. Tripurasundari, Sandip K. Dhara
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引用次数: 0
Abstract
Understanding the mechanical and thermal properties of MoS2 multilayers is of importance for applications ranging from nano-mechanical structures to high-performance flexible electronics. The conventional methods such as micro-Raman spectroscopy, are often constrained by factors like probing laser beam induced heating and substrate interactions. In the present work, we demonstrate a novel method to estimate the Young’s modulus, strain and thermal expansion co-efficient of MoS2 multilayers using a bimaterial like micro-mechanical device made of MoS2 and SiO2. SiO2 microcantilevers (MC) were fabricated using bulk micromachining technique and MoS2 layers were grown on one side of the device by chemical vapor deposition method. Shift in resonance frequency due to the added MOS2 layers on MCs was used to estimate the Young’s modulus of layered MoS2. Similarly, growth induced curvature change of the bimaterial MCs was measured to estimate the interfacial stress between the MoS2 multilayers and the substrate. From the measured temperature induced curvature changes, thermal expansion co-efficient of layered MoS2 was estimated.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
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