Sensitive determination of mechanical and thermal properties of MoS2 multilayers using microcantilevers

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
M. Raghu Ramaiah, R.G. Athira, Kishore K. Madapu, K. Prabakar, S. Tripurasundari, Sandip K. Dhara
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引用次数: 0

Abstract

Understanding the mechanical and thermal properties of MoS2 multilayers is of importance for applications ranging from nano-mechanical structures to high-performance flexible electronics. The conventional methods such as micro-Raman spectroscopy, are often constrained by factors like probing laser beam induced heating and substrate interactions. In the present work, we demonstrate a novel method to estimate the Young’s modulus, strain and thermal expansion co-efficient of MoS2 multilayers using a bimaterial like micro-mechanical device made of MoS2 and SiO2. SiO2 microcantilevers (MC) were fabricated using bulk micromachining technique and MoS2 layers were grown on one side of the device by chemical vapor deposition method. Shift in resonance frequency due to the added MOS2 layers on MCs was used to estimate the Young’s modulus of layered MoS2. Similarly, growth induced curvature change of the bimaterial MCs was measured to estimate the interfacial stress between the MoS2 multilayers and the substrate. From the measured temperature induced curvature changes, thermal expansion co-efficient of layered MoS2 was estimated.

利用微悬臂灵敏测定 MoS2 多层膜的机械和热性能
了解 MoS2 多层膜的机械和热特性对于从纳米机械结构到高性能柔性电子器件等各种应用都非常重要。微拉曼光谱法等传统方法往往受到探测激光束诱导加热和基底相互作用等因素的限制。在本研究中,我们展示了一种新方法,利用由 MoS2 和 SiO2 制成的双材料微型机械装置来估算 MoS2 多层膜的杨氏模量、应变和热膨胀系数。SiO2 微悬臂 (MC) 采用体微加工技术制造,MoS2 层则通过化学气相沉积法生长在装置的一侧。利用 MC 上添加的 MOS2 层引起的共振频率偏移来估算层状 MoS2 的杨氏模量。同样,通过测量双材料 MC 的生长诱导曲率变化来估算 MoS2 多层与基底之间的界面应力。通过测量温度引起的曲率变化,可以估算出层状 MoS2 的热膨胀系数。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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