Controlling the thiourea for optimized growth of CdS nanorod arrays for improved photoelectrochemical water splitting

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-09-16 DOI:10.1016/j.jcrysgro.2024.127893

Rem Yann , Sreymean Ngok , Magnus Willander , Chan Oeurn Chey , Omer Nur

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Abstract

Energy and the environment are very important issues to secure, preserve and improve our modern lifestyle. The conversion of sunlight into hydrogen and oxygen via photoelectrochemical (PEC) water splitting is one of the most potential routes for clean energy. Cadmium sulfide (CdS) is a promising semiconductor for utilization as a photoanode. In this work, CdS has been grown via the hydrothermal method by optimizing the thiourea concentration. The growth of CdS with equal concentration of Cd²⁺ and S^2-demonstrates the crowded hexagonal-shaped nanorod arrays with small diameter and relatively longer length, and it exhibits the highest photocurrent density due to some factors, such as high length-to-diameter ratio, large reaction area, suitable flat band potential, slow charge recombination rate, fast charge transfer, suitable conduction and valence band edges, and surface reaction kinetics. This work will be of potential to further develop improved nanocomposites of CdS nanorods for hydrogen production and research in related fields.

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控制硫脲以优化 CdS 纳米棒阵列的生长，从而提高光电化学水分离效果

能源和环境是确保、保护和改善我们现代生活方式的重要问题。通过光电化学（PEC）分水将太阳光转化为氢气和氧气是清洁能源最有潜力的途径之一。硫化镉（CdS）是一种很有希望用作光阳极的半导体。在这项工作中，通过优化硫脲浓度，采用水热法生长了 CdS。在 Cd2+ 和 S2-浓度相等的情况下生长的 CdS 显示出拥挤的六角形纳米棒阵列，其直径较小，长度相对较长，并且由于高长径比、大反应面积、合适的平带电位、缓慢的电荷重组速率、快速的电荷转移、合适的导带和价带边缘以及表面反应动力学等因素，它表现出最高的光电流密度。这项工作将有望进一步开发出改进的 CdS 纳米棒纳米复合材料，用于制氢和相关领域的研究。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.