Growth of CuO NPs layers on TiO2 NTs using vacuum thermal evaporation

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-09-16 DOI:10.1016/j.jcrysgro.2024.127895

Loubaba Attou , Habiba Mamori , Boujemaâ Jaber , Hamid Ez-Zahraouy , Khadija El Maalam , Mohamed Balli

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引用次数: 0

Abstract

CuO/TiO₂ composites have been reported to exhibit higher potential for various applications (electronics, energy storage, and sensor technology…). This study investigates the impact of different film thicknesses on the properties of CuO NPs on TiO₂ NTs. CuO NPs were deposited onto TiO₂ NTs using vacuum thermal evaporation, with thicknesses ranging from 5 to 30 nm. A quartz crystal monitor measured evaporation rate and film thickness at a substrate temperature of 350 °C. Following the deposition process, the samples were thermally treated through air annealing at 400 °C for 1 h.

XRD analysis showed that all films had an anatase phase. The annealed sample also had a confirmed CuO phase, indicating good crystallinity. Crystallite size and strain varied with film thickness, assessed using the Williamson-Hall method and Rietveld refinement. The deposition and distribution of CuO on TiO₂ NTs were verified using Scanning Electron Microscopy (SEM) combined with energy dispersive spectroscopy (EDS). Optimizing the materials nanostructures requires controlling film thickness and annealing. Insights from this study can improve nanomaterial fabrication techniques, which could enhance their performance in technological applications.

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利用真空热蒸发技术在二氧化钛氮氧化物上生长氧化铜氮氧化物层

据报道，CuO/TiO2 复合材料在各种应用领域（电子学、能量存储和传感器技术......）表现出更大的潜力。本研究探讨了不同薄膜厚度对 TiO2 NT 上 CuO NPs 性能的影响。采用真空热蒸发法将氧化铜氮氧化物沉积到二氧化钛氮氧化物上，薄膜厚度从 5 纳米到 30 纳米不等。在基底温度为350 °C时，石英晶体监测器测量了蒸发速率和薄膜厚度。沉积过程结束后，样品在 400 °C 下空气退火 1 小时，进行热处理。XRD 分析表明，所有薄膜都具有锐钛矿相，退火后的样品还具有确认的 CuO 相，表明结晶度良好。使用威廉森-霍尔法和里特维尔德细化法评估了晶体尺寸和应变随薄膜厚度的变化。使用扫描电子显微镜（SEM）结合能量色散光谱（EDS）验证了二氧化钛（TiO2）NT 上氧化铜的沉积和分布。优化材料的纳米结构需要控制薄膜厚度和退火。这项研究的启示可以改进纳米材料的制造技术，从而提高其在技术应用中的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.