Mechanisms of Three-Dimensional Solid-Phase Epitaxial Crystallization of Strontium Titanate

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Tesia D. Janicki, Rui Liu, Soohyun Im, Zhongyi Wan, Serkan Butun, Shaoning Lu, Nasir Basit, Paul M. Voyles, Paul G. Evans and J. R. Schmidt*, 
{"title":"Mechanisms of Three-Dimensional Solid-Phase Epitaxial Crystallization of Strontium Titanate","authors":"Tesia D. Janicki,&nbsp;Rui Liu,&nbsp;Soohyun Im,&nbsp;Zhongyi Wan,&nbsp;Serkan Butun,&nbsp;Shaoning Lu,&nbsp;Nasir Basit,&nbsp;Paul M. Voyles,&nbsp;Paul G. Evans and J. R. Schmidt*,&nbsp;","doi":"10.1021/acs.cgd.4c0008110.1021/acs.cgd.4c00081","DOIUrl":null,"url":null,"abstract":"<p >Strontium titanate (SrTiO<sub>3</sub>, STO) is a complex metal oxide with a cubic perovskite crystal structure. Due to its easily described and understood crystal structure in the cubic phase, STO is an ideal model system for exploring the mechanistic details of solid-phase epitaxy (SPE) in complex oxides. SPE is a crystallization approach that aims to guide crystal growth at low homologous temperatures to achieve targeted microstructures. Beyond planar thin films, SPE can also exploit the addition of a chemically inert, noncrystallizing, amorphous obstacle in the path of crystallization to generate complex three-dimensional structures. The introduction of this mask fundamentally alters the SPE process, inducing a transition from two- to three-dimensional geometries and from vertical to lateral crystal growth under the influence of the crystal/mask/amorphous boundary. Using a combination of molecular dynamics simulations and experiments, we identify several unique phenomena in the nanoscale growth behaviors in both conventional (unmasked) and masked SPE. Examining conventional SPE of STO, we find that crystallization at the interface is strongly correlated to, and potentially driven by, density fluctuations in the region of the amorphous STO near the crystalline/amorphous interface with a strong facet dependence. In the masked case, we find that the crystalline growth front becomes nonplanar near contact with the mask. We also observe a minimum vertical growth requirement prior to lateral crystallization. Both phenomena depend on the relative bulk and interfacial free energies of the three-phase (crystal/mask/amorphous) system.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.cgd.4c00081","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Strontium titanate (SrTiO3, STO) is a complex metal oxide with a cubic perovskite crystal structure. Due to its easily described and understood crystal structure in the cubic phase, STO is an ideal model system for exploring the mechanistic details of solid-phase epitaxy (SPE) in complex oxides. SPE is a crystallization approach that aims to guide crystal growth at low homologous temperatures to achieve targeted microstructures. Beyond planar thin films, SPE can also exploit the addition of a chemically inert, noncrystallizing, amorphous obstacle in the path of crystallization to generate complex three-dimensional structures. The introduction of this mask fundamentally alters the SPE process, inducing a transition from two- to three-dimensional geometries and from vertical to lateral crystal growth under the influence of the crystal/mask/amorphous boundary. Using a combination of molecular dynamics simulations and experiments, we identify several unique phenomena in the nanoscale growth behaviors in both conventional (unmasked) and masked SPE. Examining conventional SPE of STO, we find that crystallization at the interface is strongly correlated to, and potentially driven by, density fluctuations in the region of the amorphous STO near the crystalline/amorphous interface with a strong facet dependence. In the masked case, we find that the crystalline growth front becomes nonplanar near contact with the mask. We also observe a minimum vertical growth requirement prior to lateral crystallization. Both phenomena depend on the relative bulk and interfacial free energies of the three-phase (crystal/mask/amorphous) system.

Abstract Image

钛酸锶的三维固相外延结晶机制
钛酸锶(SrTiO3,STO)是一种具有立方包晶晶体结构的复杂金属氧化物。由于其立方相晶体结构易于描述和理解,STO 是探索复杂氧化物固相外延(SPE)机理细节的理想模型系统。SPE 是一种结晶方法,旨在引导晶体在低同源温度下生长,以实现目标微结构。除了平面薄膜外,SPE 还可以利用在结晶路径上添加化学惰性、非结晶、无定形障碍物来生成复杂的三维结构。这种掩膜的引入从根本上改变了 SPE 工艺,在晶体/掩膜/非晶边界的影响下,诱导了从二维到三维几何形状的转变,以及从垂直到横向晶体生长的转变。结合分子动力学模拟和实验,我们发现了传统(无掩膜)和掩膜 SPE 中纳米级生长行为的几个独特现象。在研究 STO 的传统 SPE 时,我们发现界面处的结晶与结晶/非晶界面附近非晶 STO 区域的密度波动密切相关,并且可能受到密度波动的驱动,而密度波动与切面有很大关系。在掩膜情况下,我们发现晶体生长前沿在与掩膜接触附近变得非平面。我们还观察到横向结晶之前的最小垂直生长要求。这两种现象都取决于三相(晶体/掩膜/非晶体)体系的相对体积自由能和界面自由能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信