ScAlInN/GaN heterostructures grown by molecular beam epitaxy

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-09-17 DOI:10.1063/5.0228747

Haotian Ye, Rui Wang, Liuyun Yang, Jinlin Wang, Tao Wang, Ran Feng, Xifan Xu, Wonseok Lee, Ping Wang, Xinqiang Wang

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引用次数: 0

Abstract

Rare-earth (RE) elements doped III-nitride semiconductors have garnered attention for their potential in advanced high-frequency and high-power electronic applications. We report on the molecular beam epitaxy of quaternary alloy ScAlInN, which is an encouraging strategy to improve the heterointerface quality when grown at relatively low temperatures. Monocrystalline wurtzite phase and uniform domain structures are achieved in ScAlInN/GaN heterostructures, featuring atomically sharp interface. ScAlInN (the Sc content in the ScAlN fraction is 14%) films with lower In contents (less than 6%) are nearly lattice matched to GaN, exhibiting negligible in-plane strain, which are excellent barrier layer candidates for GaN high electron mobility transistors (HEMTs). Using a 15-nm-thick Sc0.13Al0.83In0.04N as a barrier layer in GaN HEMT, a two-dimensional electron gas density of 4.00 × 1013 cm−2 and a Hall mobility of 928 cm2/V s, with a corresponding sheet resistance of 169 Ω/□, have been achieved. This work underscores the potential of alloy engineering to adjust lattice parameters, bandgap, polarization, interfaces, and strain in emerging RE-III-nitrides, paving the way for their use in next-generation optoelectronic, electronic, acoustic, and ferroelectric applications.

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分子束外延生长的 ScAlInN/GaN 异质结构

掺杂稀土元素的三氮化物半导体因其在先进的高频和大功率电子应用中的潜力而备受关注。我们报告了四元合金 ScAlInN 的分子束外延，这是一种在相对较低温度下生长时提高异质面质量的令人鼓舞的策略。在 ScAlInN/GaN 异质结构中实现了单晶沃特兹相和均匀的畴结构，具有原子级锐利的界面。铟含量较低（低于 6%）的 ScAlInN（ScAlN 部分的 Sc 含量为 14%）薄膜与 GaN 几乎晶格匹配，面内应变可忽略不计，是 GaN 高电子迁移率晶体管 (HEMT) 的绝佳阻挡层候选材料。利用 15 纳米厚的 Sc0.13Al0.83In0.04N 作为 GaN HEMT 的阻挡层，实现了 4.00 × 1013 cm-2 的二维电子气体密度和 928 cm2/V s 的霍尔迁移率，以及 169 Ω/□ 的相应片电阻。这项工作强调了合金工程在调整新兴 RE-III 氮化物的晶格参数、带隙、极化、界面和应变方面的潜力，为它们在下一代光电、电子、声学和铁电应用中的应用铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.