Barrier heights and strong fermi-level pinning at epitaxially grown ferromagnet/ZnO/metal Schottky Interfaces for opto-spintronics applications

IF 8.3 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

ACS Applied Materials & Interfaces Pub Date : 2024-09-10 DOI:10.1016/j.surfin.2024.105091

Mohamed Belmoubarik

{"title":"Barrier heights and strong fermi-level pinning at epitaxially grown ferromagnet/ZnO/metal Schottky Interfaces for opto-spintronics applications","authors":"Mohamed Belmoubarik","doi":"10.1016/j.surfin.2024.105091","DOIUrl":null,"url":null,"abstract":"<div>Schottky contacts at the ferromagnet/ZnO interface are good candidates for the realization and control of several semiconductor emerging magnetic phenomena such spin injection and spin-controlled photonics. In this work, we demonstrate the epitaxial growth of single-phase and wurtzite-ZnO thin films on fcc Pt/Co0.30Pt0.70 (111) electrodes by molecular beam epitaxy technique. While the magnetic properties of the Pt/Co0.30Pt0.70 buffer remain unchanged after the ZnO growth, the electric measurements of back-to-back Schottky diodes reveal Schottky barrier heights at the metal/ZnO interfaces in the range of 590–690 meV using Cu, Pt and Co0.30Pt0.70 contacts. A pinning factor S and a charge neutrality level (CNL) ΦCNL of 0.08 and 4.94 eV, respectively, are obtained indicating a strong Fermi-level pining with a CNL level that lies 0.64 eV bellow the conductance band of ZnO semiconductor. These experimental findings indicate that Co0.30Pt0.70/ZnO interface follows the metal-induced gap states model and can open a pathway for the realization of opto-spintronics applications such spin-LEDs.</div>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":8.3000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2468023024012471/pdfft?md5=66f9e41a171f57cd141e101e2f0106f3&pid=1-s2.0-S2468023024012471-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468023024012471","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

Schottky contacts at the ferromagnet/ZnO interface are good candidates for the realization and control of several semiconductor emerging magnetic phenomena such spin injection and spin-controlled photonics. In this work, we demonstrate the epitaxial growth of single-phase and wurtzite-ZnO thin films on fcc Pt/Co_0.30Pt_0.70 (111) electrodes by molecular beam epitaxy technique. While the magnetic properties of the Pt/Co_0.30Pt_0.70 buffer remain unchanged after the ZnO growth, the electric measurements of back-to-back Schottky diodes reveal Schottky barrier heights at the metal/ZnO interfaces in the range of 590–690 meV using Cu, Pt and Co_0.30Pt_0.70 contacts. A pinning factor S and a charge neutrality level (CNL) Φ_CNL of 0.08 and 4.94 eV, respectively, are obtained indicating a strong Fermi-level pining with a CNL level that lies 0.64 eV bellow the conductance band of ZnO semiconductor. These experimental findings indicate that Co_0.30Pt_0.70/ZnO interface follows the metal-induced gap states model and can open a pathway for the realization of opto-spintronics applications such spin-LEDs.

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用于光-自旋电子学应用的外延生长铁磁体/氧化锌/金属肖特基界面的势垒高度和强费米级引脚

铁磁体/氧化锌界面上的肖特基接触是实现和控制自旋注入和自旋控制光子学等若干半导体新兴磁现象的良好候选材料。在这项工作中，我们展示了通过分子束外延技术在 fcc Pt/Co0.30Pt0.70 (111) 电极上外延生长单相和钨锌氧化物薄膜的过程。氧化锌生长后，Pt/Co0.30Pt0.70 缓冲区的磁性能保持不变，而背靠背肖特基二极管的电学测量结果显示，使用铜、铂和 Co0.30Pt0.70 触点时，金属/氧化锌界面的肖特基势垒高度在 590-690 meV 之间。获得的引脚因子 S 和电荷中性电平 (CNL) ΦCNL 分别为 0.08 和 4.94 eV，表明存在较强的费米级引脚，CNL 电平位于氧化锌半导体电导带 0.64 eV 以下。这些实验结果表明，Co0.30Pt0.70/氧化锌界面遵循金属诱导间隙态模型，可为实现自旋发光二极管等光电子应用开辟一条途径。

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来源期刊

ACS Applied Materials & Interfaces 工程技术-材料科学：综合

CiteScore

16.00

自引率

6.30%

发文量

4978

审稿时长

1.8 months

期刊介绍： ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.