Towards the accurate simulation of multi-resonance emitters using mixed-reference spin-flip time-dependent density functional theory

IF 2.7 4区 工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shawana Ahmad, Julien Eng, Thomas J. Penfold
{"title":"Towards the accurate simulation of multi-resonance emitters using mixed-reference spin-flip time-dependent density functional theory","authors":"Shawana Ahmad,&nbsp;Julien Eng,&nbsp;Thomas J. Penfold","doi":"10.1016/j.orgel.2024.107138","DOIUrl":null,"url":null,"abstract":"<div><p>Multi-resonant Thermally Activated Delayed Fluorescent (MR-TADF) materials have received significant research interest owing to their potential use as emitters in high-performance Organic Light Emitting Diodes (OLEDs). Despite their advantages, including narrow emission spectra leading to high colour purity, several challenges remain in optimising the performance of these materials. One key issue is the typically long delayed fluorescence lifetime which arises from a large gap and weak coupling between the lowest lying singlet and triplet states. To develop high-performing materials, <em>in silico</em> design is an important step and consequently it is crucial to develop and deploy computational methods that accurately model their excited state properties. Previous studies have highlighted the importance of double excitations, which are not accounted for within the framework of Linear Response Time-Dependent Density Functional Theory (LR-TDDFT), contributing to the poor performance of this method for these materials. Consequently, in this work, we employ Mixed-Reference Spin-Flip Time-Dependent Density Functional Theory (MRSF-TDDFT) to calculate the properties of MR-TADF materials. Our findings indicate that this approach accurately predicts the excited state properties including the crucial <span><math><mi>Δ</mi></math></span>E<span><math><msub><mrow></mrow><mrow><mi>S</mi><mi>T</mi></mrow></msub></math></span>, the energy difference between the lowest singlet (S<span><math><msub><mrow></mrow><mrow><mn>1</mn></mrow></msub></math></span>) and triplet (T<span><math><msub><mrow></mrow><mrow><mn>1</mn></mrow></msub></math></span>) excited states. We further use this method to explore the excited state properties of systems designed to enhance the coupling between singlet and triplet states by increasing the density of states and enhancing spin–orbit coupling through metal perturbation. The results in this work sets the foundation for computationally efficient <em>in silico</em> development high-performing MR-TADF materials within the framework of MRSF-TDDFT.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"135 ","pages":"Article 107138"},"PeriodicalIF":2.7000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S1566119924001496/pdfft?md5=5c17faa195ec84aebc957c763cc53cc5&pid=1-s2.0-S1566119924001496-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Organic Electronics","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1566119924001496","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Multi-resonant Thermally Activated Delayed Fluorescent (MR-TADF) materials have received significant research interest owing to their potential use as emitters in high-performance Organic Light Emitting Diodes (OLEDs). Despite their advantages, including narrow emission spectra leading to high colour purity, several challenges remain in optimising the performance of these materials. One key issue is the typically long delayed fluorescence lifetime which arises from a large gap and weak coupling between the lowest lying singlet and triplet states. To develop high-performing materials, in silico design is an important step and consequently it is crucial to develop and deploy computational methods that accurately model their excited state properties. Previous studies have highlighted the importance of double excitations, which are not accounted for within the framework of Linear Response Time-Dependent Density Functional Theory (LR-TDDFT), contributing to the poor performance of this method for these materials. Consequently, in this work, we employ Mixed-Reference Spin-Flip Time-Dependent Density Functional Theory (MRSF-TDDFT) to calculate the properties of MR-TADF materials. Our findings indicate that this approach accurately predicts the excited state properties including the crucial ΔEST, the energy difference between the lowest singlet (S1) and triplet (T1) excited states. We further use this method to explore the excited state properties of systems designed to enhance the coupling between singlet and triplet states by increasing the density of states and enhancing spin–orbit coupling through metal perturbation. The results in this work sets the foundation for computationally efficient in silico development high-performing MR-TADF materials within the framework of MRSF-TDDFT.

Abstract Image

利用混合参考自旋翻转时变密度泛函理论实现多共振发射器的精确模拟
由于多共振热激活延迟荧光(MR-TADF)材料可用作高性能有机发光二极管(OLED)中的发射器,因此备受研究关注。尽管这些材料具有发射光谱窄、色彩纯度高等优点,但在优化这些材料的性能方面仍存在一些挑战。其中一个关键问题是荧光延迟寿命通常较长,这是因为最低位的单态和三态之间存在较大的间隙和较弱的耦合。要开发高性能材料,硅设计是重要的一步,因此开发和部署能准确模拟其激发态特性的计算方法至关重要。以往的研究强调了双激发的重要性,但线性响应时空密度泛函理论(LR-TDDFT)框架并未考虑双激发,导致该方法在这些材料上的性能不佳。因此,在这项工作中,我们采用了混合参量自旋翻转时变密度泛函理论(MRSF-TDDFT)来计算 MR-TADF 材料的性质。我们的研究结果表明,这种方法能准确预测激发态特性,包括关键的ΔEST,即最低单态(S1)和三重态(T1)激发态之间的能量差。我们进一步利用这种方法来探索系统的激发态特性,通过金属扰动来提高态密度和增强自旋轨道耦合,从而增强单重态和三重态之间的耦合。这项研究成果为在 MRSF-TDDFT 框架内高效计算硅学开发高性能 MR-TADF 材料奠定了基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Organic Electronics
Organic Electronics 工程技术-材料科学:综合
CiteScore
6.60
自引率
6.20%
发文量
238
审稿时长
44 days
期刊介绍: Organic Electronics is a journal whose primary interdisciplinary focus is on materials and phenomena related to organic devices such as light emitting diodes, thin film transistors, photovoltaic cells, sensors, memories, etc. Papers suitable for publication in this journal cover such topics as photoconductive and electronic properties of organic materials, thin film structures and characterization in the context of organic devices, charge and exciton transport, organic electronic and optoelectronic devices.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信