An LC-tank based DCO for low-power high-speed applications using full-custom nMOS-type varactors

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Pablo Jiménez-Fernández , Alberto Rodríguez-Pérez , Enrique Prefasi , Francisco Sierra , Rocío del Río , Óscar Guerra
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引用次数: 0

Abstract

LC-tank based Digital Controlled Oscillators (LC-DCOs) are widely used in digital assisted high-speed data communication systems due to their high quality factor (Q). Typically, LC-DCOs incorporate digital-controlled varactors for frequency control. The varactor structure significantly influences oscillator Q and phase noise performance. In this paper we propose using full-custom varactors built with digitally connected nMOS-type transistors to enhance the varactor Q by reducing its length. However, parasitic resistance from varactor array interconnection with the LC-tank can impact the overall oscillator performance. This paper presents a methodology to systematically include the proposed varactor array and its parasitic effects into LC-DCO design flow. Following the proposed method, an optimal combination of the inductor and varactor array can be accurately determined. As a proof of concept, we designed and manufactured a 23.5-GHz LC-DCO using 28-nm CMOS RF process. The oscillator exhibits a maximum phase noise of −90.1 dBc/Hz at 1-MHz offset with a power consumption of only 1.71 mW at 1-V supply.

使用全定制 nMOS 型变容器的基于 LC 罐的 DCO,适用于低功耗高速应用
基于 LC 槽的数字控制振荡器(LC-DCO)因其高品质因数(Q 值)而广泛应用于数字辅助高速数据通信系统。通常,LC-DCO 采用数字控制变容二极管进行频率控制。变容二极管的结构对振荡器的 Q 值和相位噪声性能有很大影响。在本文中,我们建议使用由数字连接的 nMOS 型晶体管构建的全定制变容器,通过缩短变容器的长度来增强其 Q 值。然而,变容二极管阵列与 LC 槽互连产生的寄生电阻会影响振荡器的整体性能。本文提出了一种方法,可将拟议的变容二极管阵列及其寄生效应系统地纳入 LC-DCO 设计流程。根据提出的方法,可以准确确定电感器和变容二极管阵列的最佳组合。作为概念验证,我们使用 28-nm CMOS 射频工艺设计并制造了 23.5-GHz LC-DCO。该振荡器在 1-MHz 失调电压下的最大相位噪声为 -90.1 dBc/Hz,1V 电源功耗仅为 1.71 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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