Low energy Xe ion beam engineering in optical, structural and morphological properties of hafnium oxide thin films grown by atomic layer deposition technique
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引用次数: 0
Abstract
Hafnium oxide (HfO2) exhibit chemical resistivity, thermal stability and mechanical resilience on account of which it is used in numerous applications in integrated and optical circuit technology. In the present work, HfO2 thin films have been grown by atomic layer deposition (ALD) technique on silicon and glass substrate. After growth of the films were irradiated with the Xe ion beam with distinct fluence of 1E15–1E16 ions/cm2. Optical properties of films were investigated by the UV–VIS and Photoluminescence (PL) spectroscopy. The crystallographic parameters were illustrated by X-ray diffraction (XRD) pattern of pristine and ion beam treated thin films. Morphology of surface has been studied through atomic force microscopy (AFM).
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An international periodical publishing original papers, letters, review papers and short communications on nuclear chemistry. The subjects covered include: Nuclear chemistry, Radiochemistry, Radiation chemistry, Radiobiological chemistry, Environmental radiochemistry, Production and control of radioisotopes and labelled compounds, Nuclear power plant chemistry, Nuclear fuel chemistry, Radioanalytical chemistry, Radiation detection and measurement, Nuclear instrumentation and automation, etc.
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