Fabrication and characteristics of PMMA–PEG/SiO2–SiC quaternary nanocomposites for gamma ray shielding and flexible optoelectronics applications

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-08-30 DOI:10.1007/s10854-024-13435-1

Zina Sattar, Ahmed Hashim

{"title":"Fabrication and characteristics of PMMA–PEG/SiO2–SiC quaternary nanocomposites for gamma ray shielding and flexible optoelectronics applications","authors":"Zina Sattar, Ahmed Hashim","doi":"10.1007/s10854-024-13435-1","DOIUrl":null,"url":null,"abstract":"<div>The objective of the present work is to create of new nanocomposites made from silicon dioxide (SiO2)/silicon carbide (SiC) nanostructures doped poly-methyl methacrylate (PMMA)/polyethylene glycol (PEG) polymeric blend to use in gamma ray attenuation and optoelectronics applications. The PMMA–PEG–SiO2–SiC nanocomposites’ optical properties were investigated. According to the obtained data, when the SiO2/SiC NPs ratio increases to 4.8%, the absorption (A) of PMMA–PEG increased by approximately 69.7% while the transmission (T) decreased by approximately 64.19%. When the SiO2/SiC NPs ratio reached 4.8%, the energy gap (Eg) reduced from 4.95 eV for PMMA–PEG to 3.74 eV. These findings may be crucial for the utilization of PMMA–PEG–SiO2–SiC nanocomposites in optical and gamma ray applications. When SiO2/SiC NPs were added to PMMA–PEG up to 4.8% at a wavelength of λ = 540 nm, the extra optical constants like the coefficient of absorption (α), index of refractive (n), coefficient of extinction (k), real (ε1) and imaginary (ε2) dielectric constants, and conductivity (σop) enhanced by approximately 36.47%, 79.92%, 34.84%, 60.71%, 27.53%, and 27.28%, respectively. These behaviors make the PMMA–PEG–SiO2–SiC nanocomposites suitable optical materials for electronic and optical applications. Lastly, as nanoparticle concentrations rise, the attenuation coefficients for gamma radiation increased. The outcomes demonstrated that the nanocomposites of (PMMA–PEG–SiO2–SiC) exhibit high attenuation coefficients.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13435-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

The objective of the present work is to create of new nanocomposites made from silicon dioxide (SiO₂)/silicon carbide (SiC) nanostructures doped poly-methyl methacrylate (PMMA)/polyethylene glycol (PEG) polymeric blend to use in gamma ray attenuation and optoelectronics applications. The PMMA–PEG–SiO₂–SiC nanocomposites’ optical properties were investigated. According to the obtained data, when the SiO₂/SiC NPs ratio increases to 4.8%, the absorption (A) of PMMA–PEG increased by approximately 69.7% while the transmission (T) decreased by approximately 64.19%. When the SiO₂/SiC NPs ratio reached 4.8%, the energy gap (E_g) reduced from 4.95 eV for PMMA–PEG to 3.74 eV. These findings may be crucial for the utilization of PMMA–PEG–SiO₂–SiC nanocomposites in optical and gamma ray applications. When SiO₂/SiC NPs were added to PMMA–PEG up to 4.8% at a wavelength of λ = 540 nm, the extra optical constants like the coefficient of absorption (α), index of refractive (n), coefficient of extinction (k), real (ε₁) and imaginary (ε₂) dielectric constants, and conductivity (σ_op) enhanced by approximately 36.47%, 79.92%, 34.84%, 60.71%, 27.53%, and 27.28%, respectively. These behaviors make the PMMA–PEG–SiO₂–SiC nanocomposites suitable optical materials for electronic and optical applications. Lastly, as nanoparticle concentrations rise, the attenuation coefficients for gamma radiation increased. The outcomes demonstrated that the nanocomposites of (PMMA–PEG–SiO₂–SiC) exhibit high attenuation coefficients.

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用于伽马射线屏蔽和柔性光电应用的 PMMA-PEG/SiO2-SiC 季纳米复合材料的制备及其特性

本研究的目的是用二氧化硅（SiO2）/碳化硅（SiC）纳米结构掺杂聚甲基丙烯酸甲酯（PMMA）/聚乙二醇（PEG）聚合物混合物制成新型纳米复合材料，用于伽马射线衰减和光电子学应用。研究了 PMMA-PEG-SiO2-SiC 纳米复合材料的光学特性。结果表明，当 SiO2/SiC NPs 的比例增加到 4.8% 时，PMMA-PEG 的吸收率（A）增加了约 69.7%，而透射率（T）则降低了约 64.19%。当 SiO2/SiC NPs 比率达到 4.8% 时，能隙 (Eg) 从 PMMA-PEG 的 4.95 eV 减小到 3.74 eV。这些发现可能对 PMMA-PEG-SiO2-SiC 纳米复合材料在光学和伽马射线领域的应用至关重要。在波长为 λ = 540 nm 的 PMMA-PEG 中添加 4.8% 的 SiO2/SiC NPs 时，额外的光学常数，如吸收系数 (α)、折射率 (n)、消光系数 (k)、实常数 (ε1) 和虚常数 (ε2)，以及电导率 (σop) 提高了约 36.47%、79.92%、34.84%、60.71%、27.53% 和 27.28%。这些特性使 PMMA-PEG-SiO2-SiC 纳米复合材料成为适合电子和光学应用的光学材料。最后，随着纳米粒子浓度的增加，伽马射线的衰减系数也随之增加。研究结果表明，（PMMA-PEG-SiO2-SiC）纳米复合材料具有很高的衰减系数。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.