Synthesis, growth and characterization of nonlinear optical crystal: propylenediamine picrate (PDP) single crystals

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
R. Raja, S. Seshadri, V. Santhanam
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Abstract

In this study, slow evaporation technique is used for the growth of organic single crystal of Propylenediamine Picrate (PDP) and this research investigates crystallographic, experimental, and theoretical density functional theory (DFT) of PDP. The crystal structure was found from single-crystal XRD analysis. Spectral analyses, including UV–Vis and FTIR spectroscopy, revealed a bandgap energy of 3.505 eV and identified key functional groups. The SHG efficiency of the crystal is measured to study the NLO property of the crystal. The (SHG) efficiency was measured as 0.53 that of KDP, confirming the nonlinear optical (NLO) properties. Thermal stability was evaluated using TG/DTA, and the crystal’s mechanical hardness was measured as 2.753 via Vickers microhardness testing. Dielectric properties, including loss, permittivity, and AC conductivity, were examined at varying temperatures. The first-order hyperpolarizability (β0) and related properties (β, α0, and Δα) of PDP is calculated usingB3LYP/6-31G (d,p) method on the finite field approach. The study reveals that the transfer of charge occurs within these molecules through the analysis of the molecular structure of PDP, performed using the molecular electrostatic potential (MESP) and calculated HOMO and LUMO energies. The study confirms PDP’s potential in optoelectronic applications.

Abstract Image

非线性光学晶体:苦味酸丙二胺(PDP)单晶的合成、生长和表征
本研究采用慢速蒸发技术来生长有机单晶吡啶甲酸丙二胺(PDP),并对 PDP 的晶体学、实验和理论密度泛函理论(DFT)进行了研究。通过单晶 XRD 分析发现了其晶体结构。光谱分析(包括紫外-可见光谱和傅立叶变换红外光谱)显示带隙能为 3.505 eV,并确定了关键官能团。测量了晶体的 SHG 效率,以研究晶体的 NLO 特性。测量得出的(SHG)效率为 KDP 的 0.53,证实了其非线性光学(NLO)特性。利用 TG/DTA 对热稳定性进行了评估,并通过维氏硬度测试测得晶体的机械硬度为 2.753。在不同温度下对介电特性(包括损耗、介电常数和交流电导率)进行了检测。使用有限场方法中的 B3LYP/6-31G (d,p) 方法计算了 PDP 的一阶超极化率(β0)和相关特性(β、α0 和 Δα)。研究利用分子静电势 (MESP) 和计算出的 HOMO 和 LUMO 能量分析了 PDP 的分子结构,从而发现电荷在这些分子内发生转移。这项研究证实了 PDP 在光电应用方面的潜力。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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