Single-Mode VCSELs With Zn-Diffusion Apertures for Applications in Co-Packaged Optics Systems

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-04 DOI:10.1109/JSTQE.2024.3454318

Cheng-Wei Lin;Zhe-Wei Hsu;Jian-Wei Tung;Xin Chen;Chia-Hsuan Wang;Dong Hao;Jia-Liang Yen;J.-J. Liu;Ming-Jun Li;Jin-Wei Shi

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引用次数: 0

Abstract

High-speed vertical-cavity surface-emitting lasers (VCSELs) with high single-mode (SM) output power and strong immunity to optical feedback play a vital role in further improving the package density in co-packaged optics (CPO) systems. Here, by optimizing the structure of VCSEL cavities with Zn-diffusion apertures inside, we can simultaneously improve the SM output power and speed of 850 nm VCSELs. With this novel structure we can achieve a record-high SM output power of 16 mW and a wide 3-dB electrical-to-optical (E-O) bandwidth of 18 GHz. Furthermore, excellent VCSEL performance can be obtained by varying the aperture size for high-speed operations, such as wide E-O bandwidth (27 GHz), high SM power (6.7 mW), low-RIN (−137 dB/Hz), and invariant 56 Gbps eye patterns under strong optical feedback (−6 dB). Error-free transmission can be achieved at around 48 Gbit/sec through 500 and 200 m multi-mode and single-mode fibers, respectively, without the use of equalizers in the transmission channels.

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带 Zn 扩散孔的单模 VCSEL 在共封装光学系统中的应用

高速垂直腔表面发射激光器（VCSEL）具有较高的单模（SM）输出功率和较强的光反馈抗扰度，在进一步提高共封装光学（CPO）系统的封装密度方面发挥着至关重要的作用。在这里，通过优化内部带有锌扩散孔的 VCSEL 腔体结构，我们可以同时提高 850 nm VCSEL 的 SM 输出功率和速度。利用这种新型结构，我们可以实现 16 mW 的创纪录高 SM 输出功率和 18 GHz 的宽 3 分贝电-光（E-O）带宽。此外，通过改变高速运行的孔径大小，还能获得出色的 VCSEL 性能，例如宽 E-O 带宽（27 GHz）、高 SM 功率（6.7 mW）、低 RIN（-137 dB/Hz）以及强光反馈下不变的 56 Gbps 眼图（-6 dB）。在传输信道中不使用均衡器的情况下，通过 500 米多模光纤和 200 米单模光纤可分别实现约 48 Gbit/sec 的无差错传输。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.